PAOLUCCI, GIOVANNI MARIA

PAOLUCCI, GIOVANNI MARIA  

DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA  

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Risultati 1 - 17 di 17 (tempo di esecuzione: 0.047 secondi).
Titolo Data di pubblicazione Autori File
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 1-gen-2015 MICCOLI, CARMINEPAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDRO +
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 1-gen-2014 PAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 1-gen-2013 PAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANCASTELLANI, NICCOLO'LACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
First detection of single-electron charging of the floating gate of NAND Flash memory cells 1-gen-2015 MONZIO COMPAGNONI, CHRISTIANPAOLUCCI, GIOVANNI MARIASOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 1-gen-2015 PAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 1-gen-2015 PAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 1-gen-2012 PAOLUCCI, GIOVANNI MARIAMICCOLI, CARMINEMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Investigation of the turn-on of T-RAM cells under transient conditions 1-gen-2015 MULAOSMANOVIC, HALIDMONZIO COMPAGNONI, CHRISTIANCASTELLANI, NICCOLO'PAOLUCCI, GIOVANNI MARIALACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 1-gen-2014 PAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANMICCOLI, CARMINELACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 1-gen-2015 RESNATI, DAVIDEMONZIO COMPAGNONI, CHRISTIANPAOLUCCI, GIOVANNI MARIAMICCOLI, CARMINESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Reliability investigation of T-RAM cells for DRAM applications 1-gen-2014 MULAOSMANOVIC, HALIDPAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 1-gen-2013 MICCOLI, CARMINEMONZIO COMPAGNONI, CHRISTIANPAOLUCCI, GIOVANNI MARIALACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 1-gen-2014 PAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANMICCOLI, CARMINESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part II: on-field operation and distributed-cycling effects 1-gen-2014 PAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANMICCOLI, CARMINESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
A single-electron analysis of NAND Flash memory programming 1-gen-2015 NICOSIA, GIANLUCAPAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANRESNATI, DAVIDEMICCOLI, CARMINESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
String current in decananometer NAND Flash arrays: a compact-modeling investigation 1-gen-2012 PAOLUCCI, GIOVANNI MARIAMICCOLI, CARMINEMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Working principles of a DRAM cell based on gated-thyristor bistability 1-gen-2014 MULAOSMANOVIC, HALIDPAOLUCCI, GIOVANNI MARIAMONZIO COMPAGNONI, CHRISTIANCASTELLANI, NICCOLO'LACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +