RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

REDAELLI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 2.222
EU - Europa 1.361
AS - Asia 815
SA - Sud America 153
AF - Africa 57
Continente sconosciuto - Info sul continente non disponibili 18
OC - Oceania 2
Totale 4.628
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Nazione #
US - Stati Uniti d'America 2.158
RU - Federazione Russa 551
SG - Singapore 279
IT - Italia 224
CN - Cina 206
BR - Brasile 124
AT - Austria 82
DE - Germania 82
UA - Ucraina 78
FR - Francia 73
HK - Hong Kong 66
VN - Vietnam 62
GB - Regno Unito 61
KR - Corea 54
CA - Canada 52
NL - Olanda 49
MA - Marocco 45
SE - Svezia 42
FI - Finlandia 41
JP - Giappone 35
JO - Giordania 27
IN - India 22
IE - Irlanda 19
ES - Italia 16
AR - Argentina 14
BD - Bangladesh 13
PL - Polonia 13
TR - Turchia 10
CH - Svizzera 7
PH - Filippine 6
TW - Taiwan 6
EC - Ecuador 5
LT - Lituania 5
PK - Pakistan 5
BE - Belgio 4
IQ - Iraq 4
MX - Messico 4
BJ - Benin 3
CI - Costa d'Avorio 3
CL - Cile 3
CR - Costa Rica 3
ID - Indonesia 3
JM - Giamaica 3
TM - Turkmenistan 3
UZ - Uzbekistan 3
ZA - Sudafrica 3
CZ - Repubblica Ceca 2
GR - Grecia 2
KG - Kirghizistan 2
PT - Portogallo 2
UY - Uruguay 2
VE - Venezuela 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BH - Bahrain 1
BY - Bielorussia 1
CO - Colombia 1
DK - Danimarca 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
GF - Guiana Francese 1
GL - Groenlandia 1
GT - Guatemala 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MD - Moldavia 1
MK - Macedonia 1
NC - Nuova Caledonia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PY - Paraguay 1
RO - Romania 1
SI - Slovenia 1
TH - Thailandia 1
TZ - Tanzania 1
Totale 4.610
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Città #
Ashburn 283
San Jose 202
Santa Clara 163
Singapore 162
Fairfield 148
Chandler 125
Woodbridge 112
Moscow 85
Houston 83
Vienna 81
Wilmington 81
Milan 66
Seattle 61
Hong Kong 59
Cambridge 58
Council Bluffs 58
Los Angeles 54
Ann Arbor 48
Jacksonville 48
Hefei 46
Seoul 46
Beijing 38
Boardman 36
The Dalles 36
Tokyo 34
Dearborn 31
Ottawa 31
Amman 27
Dallas 27
North Charleston 27
Kenitra 24
Lauterbourg 24
London 23
Lawrence 22
Medford 22
Casablanca 20
Rome 20
Amsterdam 19
Dublin 19
Helsinki 19
Ho Chi Minh City 19
Hanoi 18
Kent 17
Buffalo 16
Phoenix 16
Orem 15
Frankfurt am Main 13
New York 13
São Paulo 12
Des Moines 11
Warsaw 11
Málaga 10
Toulouse 10
Aachen 8
San Diego 8
Shanghai 8
Belo Horizonte 7
Las Vegas 7
Bari 6
Brooklyn 6
Chennai 6
Montreal 6
Munich 6
Palermo 6
Taipei 6
Washington 6
Ankara 5
Hillsboro 5
Naples 5
Nuremberg 5
Brasília 4
Chicago 4
Denver 4
Grenoble 4
Manchester 4
New Delhi 4
Verona 4
Zurich 4
Abidjan 3
Ashgabat 3
Atlanta 3
Bologna 3
Campinas 3
Cotonou 3
Dong Ket 3
Florence 3
Frisco 3
Johannesburg 3
Marseille 3
Nanchang 3
Peoria 3
Piscataway 3
Salt Lake City 3
San Antonio 3
San José 3
Shijiazhuang 3
Tashkent 3
Tianjin 3
Toronto 3
Xi'an 3
Totale 2.953
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Nome #
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 222
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 210
Multiphysics modeling of PCM devices for scaling investigation 197
Intrinsic data retenction in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time 188
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories 187
What molecular dynamics simulations can tell us about mechanical properties of kinesin and its interaction with tubulin. 183
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 177
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 176
Reliability study of phase-change non-volatile memories. 175
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 173
Electronic switching effect and phase-change transition in chalcogenide materials 172
BEOL Process Effects on ePCM Reliability 169
Characterization of reset state through energy activation study in Ge-GST based ePCM 166
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells 165
Unified mechanisms for structure relaxation and crystallization in phase-change memory 162
Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators 161
Modeling and simulation of conduction characteristics and programming operation in nanoscaled phase-change memory cells 161
Phase change memory device for multibit storage 161
Impact of Material Composition on the write performance of Phase-Change Memory Devices 160
TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM 155
The race of phase change memories to nanoscale storage and applications 145
Modeling of virgin state and forming operation in embedded phase change memory (PCM) 144
Modeling of programming and read performance in phase-change memories - Part II: Program disturb and mixed scaling approach 143
Interaction between forming pulse and integration process flow in ePCM 142
Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation 141
Thresold switching and phase transition numerical models for phase change memory simulations 138
Modeling of programming and read performance in phase-change memories - Part I: cell optimization and scaling 131
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY 124
Totale 4.628
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Categoria #
all - tutte 13.601
article - articoli 8.489
book - libri 0
conference - conferenze 4.351
curatela - curatele 0
other - altro 0
patent - brevetti 761
selected - selezionate 0
volume - volumi 0
Totale 27.202
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022151 0 0 14 9 17 4 20 10 6 7 20 44
2022/2023288 30 20 19 20 41 31 2 30 63 15 15 2
2023/2024156 6 29 5 11 9 22 21 10 1 23 3 16
2024/2025617 15 19 9 6 142 77 19 57 80 30 78 85
2025/20262.169 439 350 112 151 125 109 362 112 92 146 42 129
2026/2027183 22 53 108 0 0 0 0 0 0 0 0 0
Totale 4.628