RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

REDAELLI, ANDREA
 Distribuzione geografica
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Continente #
NA - Nord America 2.006
EU - Europa 1.246
AS - Asia 799
SA - Sud America 149
AF - Africa 57
OC - Oceania 2
Totale 4.259
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Nazione #
US - Stati Uniti d'America 1.955
RU - Federazione Russa 551
SG - Singapore 275
CN - Cina 204
BR - Brasile 123
IT - Italia 113
AT - Austria 82
DE - Germania 82
UA - Ucraina 78
FR - Francia 71
HK - Hong Kong 66
GB - Regno Unito 60
VN - Vietnam 60
KR - Corea 53
NL - Olanda 49
CA - Canada 45
MA - Marocco 45
SE - Svezia 42
FI - Finlandia 41
JP - Giappone 35
JO - Giordania 27
IN - India 22
IE - Irlanda 19
ES - Italia 16
AR - Argentina 13
PL - Polonia 13
TR - Turchia 9
BD - Bangladesh 8
CH - Svizzera 7
PH - Filippine 6
TW - Taiwan 6
EC - Ecuador 5
LT - Lituania 5
PK - Pakistan 5
BE - Belgio 4
IQ - Iraq 4
MX - Messico 4
BJ - Benin 3
CI - Costa d'Avorio 3
CL - Cile 3
TM - Turkmenistan 3
UZ - Uzbekistan 3
ZA - Sudafrica 3
CZ - Repubblica Ceca 2
GR - Grecia 2
ID - Indonesia 2
KG - Kirghizistan 2
PT - Portogallo 2
UY - Uruguay 2
AE - Emirati Arabi Uniti 1
AL - Albania 1
AZ - Azerbaigian 1
BG - Bulgaria 1
BH - Bahrain 1
DK - Danimarca 1
DZ - Algeria 1
ET - Etiopia 1
GE - Georgia 1
GF - Guiana Francese 1
GL - Groenlandia 1
JM - Giamaica 1
KW - Kuwait 1
KZ - Kazakistan 1
LA - Repubblica Popolare Democratica del Laos 1
MD - Moldavia 1
MK - Macedonia 1
NC - Nuova Caledonia 1
NP - Nepal 1
NZ - Nuova Zelanda 1
PY - Paraguay 1
RO - Romania 1
SI - Slovenia 1
TH - Thailandia 1
TZ - Tanzania 1
VE - Venezuela 1
Totale 4.259
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Città #
Ashburn 254
San Jose 182
Santa Clara 162
Singapore 161
Fairfield 148
Chandler 125
Woodbridge 112
Moscow 85
Houston 83
Vienna 81
Wilmington 80
Seattle 61
Hong Kong 59
Cambridge 58
Los Angeles 49
Ann Arbor 48
Hefei 46
Jacksonville 46
Seoul 46
Beijing 38
The Dalles 36
Milan 35
Tokyo 34
Council Bluffs 31
Dearborn 31
Ottawa 31
Boardman 29
Amman 27
North Charleston 27
Dallas 24
Kenitra 24
Lauterbourg 24
Lawrence 22
London 22
Medford 22
Casablanca 20
Amsterdam 19
Dublin 19
Helsinki 19
Hanoi 18
Ho Chi Minh City 17
Kent 17
Buffalo 16
Orem 15
Frankfurt am Main 13
New York 12
São Paulo 12
Des Moines 11
Warsaw 11
Málaga 10
Toulouse 9
Aachen 8
San Diego 8
Shanghai 8
Belo Horizonte 7
Chennai 6
Las Vegas 6
Montreal 6
Munich 6
Taipei 6
Ankara 5
Brooklyn 5
Hillsboro 5
Nuremberg 5
Rome 5
Brasília 4
Denver 4
Grenoble 4
Manchester 4
New Delhi 4
Zurich 4
Abidjan 3
Ashgabat 3
Bari 3
Campinas 3
Chicago 3
Cotonou 3
Dong Ket 3
Johannesburg 3
Nanchang 3
Piscataway 3
Shijiazhuang 3
Tashkent 3
Tianjin 3
Washington 3
Xi'an 3
Baghdad 2
Barbacena 2
Bishkek 2
Bonndorf 2
Brussels 2
Buenos Aires 2
Cabo Frio 2
Canary Wharf 2
City of London 2
Contagem 2
Cuenca 2
Dronten 2
Edinburgh 2
Erbil 2
Totale 2.764
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Nome #
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 209
A reliable technique for experimental evaluation of crystallization activation energy in PCMs 199
What molecular dynamics simulations can tell us about mechanical properties of kinesin and its interaction with tubulin. 177
Multiphysics modeling of PCM devices for scaling investigation 173
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 170
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 167
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 167
Reliability study of phase-change non-volatile memories. 165
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories 164
Intrinsic data retenction in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time 163
Electronic switching effect and phase-change transition in chalcogenide materials 160
Phase change memory device for multibit storage 157
BEOL Process Effects on ePCM Reliability 155
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells 154
Impact of Material Composition on the write performance of Phase-Change Memory Devices 153
Modeling and simulation of conduction characteristics and programming operation in nanoscaled phase-change memory cells 150
Characterization of reset state through energy activation study in Ge-GST based ePCM 148
TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM 146
Drift Compensation in Multilevel PCM for in-Memory Computing Accelerators 144
Unified mechanisms for structure relaxation and crystallization in phase-change memory 144
The race of phase change memories to nanoscale storage and applications 136
Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation 132
Interaction between forming pulse and integration process flow in ePCM 131
Modeling of programming and read performance in phase-change memories - Part II: Program disturb and mixed scaling approach 127
Modeling of virgin state and forming operation in embedded phase change memory (PCM) 127
Modeling of programming and read performance in phase-change memories - Part I: cell optimization and scaling 123
Thresold switching and phase transition numerical models for phase change memory simulations 121
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY 115
Totale 4.277
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Categoria #
all - tutte 12.156
article - articoli 7.594
book - libri 0
conference - conferenze 3.889
curatela - curatele 0
other - altro 0
patent - brevetti 673
selected - selezionate 0
volume - volumi 0
Totale 24.312
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202139 0 0 0 0 0 0 0 0 0 0 27 12
2021/2022194 5 38 14 9 17 4 20 10 6 7 20 44
2022/2023288 30 20 19 20 41 31 2 30 63 15 15 2
2023/2024156 6 29 5 11 9 22 21 10 1 23 3 16
2024/2025617 15 19 9 6 142 77 19 57 80 30 78 85
2025/20262.001 439 350 112 151 125 109 362 112 92 146 3 0
Totale 4.277