BONIARDI, MATTIA
 Distribuzione geografica
Continente #
NA - Nord America 813
EU - Europa 308
AS - Asia 73
AF - Africa 2
SA - Sud America 1
Totale 1.197
Nazione #
US - Stati Uniti d'America 785
AT - Austria 65
IT - Italia 58
UA - Ucraina 41
SE - Svezia 39
CA - Canada 27
DE - Germania 26
SG - Singapore 22
FI - Finlandia 19
ES - Italia 14
JO - Giordania 14
VN - Vietnam 14
CN - Cina 11
GB - Regno Unito 11
IE - Irlanda 11
FR - Francia 7
BE - Belgio 4
NL - Olanda 4
CH - Svizzera 3
KR - Corea 3
RO - Romania 3
CI - Costa d'Avorio 2
IN - India 2
JP - Giappone 2
RU - Federazione Russa 2
TR - Turchia 2
TW - Taiwan 2
AR - Argentina 1
GL - Groenlandia 1
ID - Indonesia 1
LT - Lituania 1
Totale 1.197
Città #
Woodbridge 106
Fairfield 101
Chandler 79
Vienna 65
Ashburn 56
Seattle 54
Wilmington 53
Santa Clara 44
Houston 42
Cambridge 32
Ann Arbor 31
Dearborn 30
Ottawa 26
Jacksonville 24
Boardman 15
Singapore 15
Amman 14
Lawrence 14
Málaga 14
Medford 13
Dublin 11
Des Moines 10
Milan 9
Beijing 5
Dong Ket 5
Helsinki 5
Amsterdam 4
Brussels 4
Bari 3
Frankfurt am Main 3
Rome 3
Seongnam 3
Abidjan 2
Ankara 2
Duncan 2
Fremont 2
Mountain View 2
Redwood City 2
Sala Baganza 2
Tokyo 2
Wuhan 2
Zurich 2
Auburn Hills 1
Baranzate 1
Berlin 1
Buenos Aires 1
Chelyabinsk 1
Edinburgh 1
Grafing 1
Grenoble 1
Hefei 1
Horia 1
Hsinchu 1
Indiana 1
Jakarta 1
La Jolla 1
Miami 1
Moscow 1
Nanchang 1
Nanjing 1
New York 1
Nuuk 1
Old Bridge 1
Princeton 1
Redmond 1
San Diego 1
Spreitenbach 1
Toronto 1
Verona 1
Washington 1
Totale 941
Nome #
Optimization Metrics for Phase Change Memory (PCM) Cell Architectures 128
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 123
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses 99
Electrical Conductivity Discontinuity at Melt in Phase Change Memory 99
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 93
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells 89
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 89
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 88
Physical origin of the resistance drift exponent in amorphous phase change materials 81
Impact of Material Composition on the write performance of Phase-Change Memory Devices 74
Unified mechanisms for structure relaxation and crystallization in phase-change memory 73
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase 64
Energy landscape models for conduction and drift in PCM 60
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY 42
Totale 1.202
Categoria #
all - tutte 3.841
article - articoli 2.338
book - libri 0
conference - conferenze 1.340
curatela - curatele 0
other - altro 0
patent - brevetti 163
selected - selezionate 0
volume - volumi 0
Totale 7.682


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020174 0 0 0 0 0 30 35 25 30 16 24 14
2020/2021161 22 7 16 4 22 20 8 10 11 13 12 16
2021/2022102 6 20 4 5 4 4 8 4 3 9 8 27
2022/2023162 19 6 14 14 21 25 0 10 31 16 6 0
2023/202480 7 18 2 7 1 8 8 3 1 15 0 10
2024/202588 5 7 7 0 69 0 0 0 0 0 0 0
Totale 1.202