BONIARDI, MATTIA
 Distribuzione geografica
Continente #
NA - Nord America 749
EU - Europa 281
AS - Asia 51
AF - Africa 2
SA - Sud America 1
Totale 1.084
Nazione #
US - Stati Uniti d'America 723
AT - Austria 65
IT - Italia 41
UA - Ucraina 41
SE - Svezia 39
CA - Canada 25
DE - Germania 23
FI - Finlandia 19
ES - Italia 14
JO - Giordania 14
VN - Vietnam 14
CN - Cina 11
IE - Irlanda 11
GB - Regno Unito 10
BE - Belgio 4
FR - Francia 4
NL - Olanda 4
CH - Svizzera 3
KR - Corea 3
RO - Romania 3
CI - Costa d'Avorio 2
IN - India 2
JP - Giappone 2
TR - Turchia 2
TW - Taiwan 2
AR - Argentina 1
GL - Groenlandia 1
SG - Singapore 1
Totale 1.084
Città #
Woodbridge 106
Fairfield 101
Chandler 79
Vienna 65
Ashburn 54
Seattle 54
Wilmington 53
Houston 42
Cambridge 32
Ann Arbor 31
Dearborn 30
Ottawa 25
Jacksonville 24
Amman 14
Lawrence 14
Málaga 14
Medford 13
Dublin 11
Des Moines 10
Beijing 5
Dong Ket 5
Helsinki 5
Amsterdam 4
Brussels 4
Bari 3
Milan 3
Rome 3
Seongnam 3
Abidjan 2
Ankara 2
Duncan 2
Fremont 2
Mountain View 2
Redwood City 2
Tokyo 2
Wuhan 2
Zurich 2
Auburn Hills 1
Baranzate 1
Berlin 1
Boardman 1
Buenos Aires 1
Edinburgh 1
Grafing 1
Grenoble 1
Hefei 1
Horia 1
Hsinchu 1
Indiana 1
La Jolla 1
Miami 1
Nanchang 1
Nanjing 1
Nuuk 1
Old Bridge 1
Princeton 1
Redmond 1
San Diego 1
Singapore 1
Spreitenbach 1
Verona 1
Washington 1
Totale 850
Nome #
Optimization Metrics for Phase Change Memory (PCM) Cell Architectures 120
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 109
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses 94
Electrical Conductivity Discontinuity at Melt in Phase Change Memory 92
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells 84
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 81
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 81
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 80
Physical origin of the resistance drift exponent in amorphous phase change materials 76
Unified mechanisms for structure relaxation and crystallization in phase-change memory 67
Impact of Material Composition on the write performance of Phase-Change Memory Devices 67
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase 53
Energy landscape models for conduction and drift in PCM 51
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY 34
Totale 1.089
Categoria #
all - tutte 3.022
article - articoli 1.859
book - libri 0
conference - conferenze 1.049
curatela - curatele 0
other - altro 0
patent - brevetti 114
selected - selezionate 0
volume - volumi 0
Totale 6.044


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019119 0 0 0 0 0 0 0 0 0 30 48 41
2019/2020271 19 21 2 23 32 30 35 25 30 16 24 14
2020/2021161 22 7 16 4 22 20 8 10 11 13 12 16
2021/2022102 6 20 4 5 4 4 8 4 3 9 8 27
2022/2023162 19 6 14 14 21 25 0 10 31 16 6 0
2023/202455 7 18 2 7 1 8 8 3 1 0 0 0
Totale 1.089