BONIARDI, MATTIA
 Distribuzione geografica
Continente #
NA - Nord America 798
EU - Europa 308
AS - Asia 66
AF - Africa 2
SA - Sud America 1
Totale 1.175
Nazione #
US - Stati Uniti d'America 770
AT - Austria 65
IT - Italia 58
UA - Ucraina 41
SE - Svezia 39
CA - Canada 27
DE - Germania 26
FI - Finlandia 19
SG - Singapore 16
ES - Italia 14
JO - Giordania 14
VN - Vietnam 14
CN - Cina 11
GB - Regno Unito 11
IE - Irlanda 11
FR - Francia 7
BE - Belgio 4
NL - Olanda 4
CH - Svizzera 3
KR - Corea 3
RO - Romania 3
CI - Costa d'Avorio 2
IN - India 2
JP - Giappone 2
RU - Federazione Russa 2
TR - Turchia 2
TW - Taiwan 2
AR - Argentina 1
GL - Groenlandia 1
LT - Lituania 1
Totale 1.175
Città #
Woodbridge 106
Fairfield 101
Chandler 79
Vienna 65
Ashburn 56
Seattle 54
Wilmington 53
Houston 42
Cambridge 32
Ann Arbor 31
Dearborn 30
Santa Clara 29
Ottawa 26
Jacksonville 24
Boardman 15
Amman 14
Lawrence 14
Málaga 14
Medford 13
Dublin 11
Des Moines 10
Milan 9
Singapore 9
Beijing 5
Dong Ket 5
Helsinki 5
Amsterdam 4
Brussels 4
Bari 3
Frankfurt am Main 3
Rome 3
Seongnam 3
Abidjan 2
Ankara 2
Duncan 2
Fremont 2
Mountain View 2
Redwood City 2
Sala Baganza 2
Tokyo 2
Wuhan 2
Zurich 2
Auburn Hills 1
Baranzate 1
Berlin 1
Buenos Aires 1
Chelyabinsk 1
Edinburgh 1
Grafing 1
Grenoble 1
Hefei 1
Horia 1
Hsinchu 1
Indiana 1
La Jolla 1
Miami 1
Moscow 1
Nanchang 1
Nanjing 1
New York 1
Nuuk 1
Old Bridge 1
Princeton 1
Redmond 1
San Diego 1
Spreitenbach 1
Toronto 1
Verona 1
Washington 1
Totale 919
Nome #
Optimization Metrics for Phase Change Memory (PCM) Cell Architectures 127
A physics-based model of electrical conduction decrease with time in amorphous Ge2Sb2Te5 121
Common signature of many-body thermal excitation in structural relaxation and crystallization of chalcogenide glasses 98
Electrical Conductivity Discontinuity at Melt in Phase Change Memory 97
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 91
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells 88
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 87
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories 86
Physical origin of the resistance drift exponent in amorphous phase change materials 80
Unified mechanisms for structure relaxation and crystallization in phase-change memory 72
Impact of Material Composition on the write performance of Phase-Change Memory Devices 72
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase 63
Energy landscape models for conduction and drift in PCM 59
MODIFIED RESET STATE FOR ENHANCED READ MARGIN OF PHASE CHANGE MEMORY 39
Totale 1.180
Categoria #
all - tutte 3.779
article - articoli 2.298
book - libri 0
conference - conferenze 1.323
curatela - curatele 0
other - altro 0
patent - brevetti 158
selected - selezionate 0
volume - volumi 0
Totale 7.558


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020206 0 0 0 0 32 30 35 25 30 16 24 14
2020/2021161 22 7 16 4 22 20 8 10 11 13 12 16
2021/2022102 6 20 4 5 4 4 8 4 3 9 8 27
2022/2023162 19 6 14 14 21 25 0 10 31 16 6 0
2023/202480 7 18 2 7 1 8 8 3 1 15 0 10
2024/202566 5 7 7 0 47 0 0 0 0 0 0 0
Totale 1.180