BONIARDI, MATTIA
 Distribuzione geografica
Continente #
EU - Europa 95
NA - Nord America 37
AS - Asia 36
AF - Africa 2
OC - Oceania 1
Totale 171
Nazione #
IT - Italia 54
US - Stati Uniti d'America 37
FR - Francia 11
SG - Singapore 10
DE - Germania 8
JP - Giappone 8
GB - Regno Unito 7
RO - Romania 7
IN - India 4
IR - Iran 4
CN - Cina 3
VN - Vietnam 3
AT - Austria 2
CH - Svizzera 2
TR - Turchia 2
AU - Australia 1
DZ - Algeria 1
ES - Italia 1
HK - Hong Kong 1
KR - Corea 1
RU - Federazione Russa 1
SE - Svezia 1
UA - Ucraina 1
ZA - Sudafrica 1
Totale 171
Città #
Milan 20
Duncan 6
Singapore 6
Exeter 5
Pittsburgh 5
Aachen 4
Kolkata 3
New York 3
Albuquerque 2
Angers 2
Fremont 2
Lecco 2
Sidney 2
Suita 2
Varedo 2
Ann Arbor 1
Asaka 1
Ashburn 1
Assago 1
Baranzate 1
Barcelona 1
Boardman 1
Calenzano 1
Cambridge 1
Cedar Knolls 1
Central District 1
Constantine 1
Dayton 1
Deruta 1
Dong Ket 1
Dresden 1
Düzce 1
Geneve 1
Genoa 1
Hiroshima 1
Inveruno 1
Jersey City 1
Johannesburg 1
Las Vegas 1
Ling 1
Los Angeles 1
Melbourne 1
Melegnano 1
Mesa 1
Metz 1
Moscow 1
Paris 1
Plymouth 1
Portland 1
Providence 1
Rozzano 1
Southampton 1
State College 1
Taglio di Po 1
Tokyo 1
Yorba Linda 1
Totale 107
Nome #
Electrical Conductivity Discontinuity at Melt in Phase Change Memory, file e0c31c0d-c6c1-4599-e053-1705fe0aef77 151
Electrical Conductivity Discontinuity at Melt in Phase Change Memory, file e0c31c08-2419-4599-e053-1705fe0aef77 7
Optimization Metrics for Phase Change Memory (PCM) Cell Architectures, file e0c31c07-bdf5-4599-e053-1705fe0aef77 3
Kinetic of resistance drift in PCM by structural relaxation of the amorphous chalcogenide phase, file e0c31c09-d862-4599-e053-1705fe0aef77 3
Impact of Material Composition on the write performance of Phase-Change Memory Devices, file e0c31c07-e89d-4599-e053-1705fe0aef77 2
Unified mechanisms for structure relaxation and crystallization in phase-change memory, file e0c31c09-cae0-4599-e053-1705fe0aef77 2
Statistics of resistance drift due to structural relaxation in phase-change memory arrays, file e0c31c07-e895-4599-e053-1705fe0aef77 1
Impact of Ge–Sb–Te compound engineering on the set operation performance in phase-change memories, file e0c31c07-f1fa-4599-e053-1705fe0aef77 1
Study of Cycling-Induced Parameter Variations in Phase Change Memory Cells, file e0c31c08-15a9-4599-e053-1705fe0aef77 1
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices, file e0c31c08-34ee-4599-e053-1705fe0aef77 1
Totale 172
Categoria #
all - tutte 323
article - articoli 314
book - libri 0
conference - conferenze 9
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 646


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191 0 0 0 0 0 0 0 0 0 0 0 1
2019/20208 1 0 0 0 0 0 0 0 3 0 2 2
2020/202137 0 0 2 0 10 3 5 2 1 2 5 7
2021/202242 3 8 1 0 2 5 0 3 12 1 4 3
2022/202334 3 4 5 3 2 5 1 2 6 1 1 1
2023/202436 4 2 5 0 3 4 2 8 4 4 0 0
Totale 172