RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

NARDI, FEDERICO
 Distribuzione geografica
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Continente #
NA - Nord America 2.739
EU - Europa 1.333
AS - Asia 782
SA - Sud America 137
AF - Africa 14
Continente sconosciuto - Info sul continente non disponibili 3
Totale 5.008
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Nazione #
US - Stati Uniti d'America 2.689
RU - Federazione Russa 564
SG - Singapore 304
CN - Cina 186
IT - Italia 186
BR - Brasile 110
UA - Ucraina 96
VN - Vietnam 93
AT - Austria 91
DE - Germania 81
GB - Regno Unito 61
FR - Francia 57
SE - Svezia 45
FI - Finlandia 42
KR - Corea 40
JO - Giordania 33
CA - Canada 32
IE - Irlanda 28
JP - Giappone 25
IN - India 23
BD - Bangladesh 19
SI - Slovenia 18
PL - Polonia 15
BE - Belgio 13
TW - Taiwan 10
ES - Italia 8
NL - Olanda 8
TR - Turchia 8
AR - Argentina 7
HK - Hong Kong 7
VE - Venezuela 7
IQ - Iraq 6
UZ - Uzbekistan 6
ID - Indonesia 4
RO - Romania 4
ZA - Sudafrica 4
CH - Svizzera 3
CO - Colombia 3
CR - Costa Rica 3
EC - Ecuador 3
IR - Iran 3
MA - Marocco 3
MX - Messico 3
AE - Emirati Arabi Uniti 2
BB - Barbados 2
BO - Bolivia 2
CZ - Repubblica Ceca 2
HU - Ungheria 2
LT - Lituania 2
OM - Oman 2
PE - Perù 2
PH - Filippine 2
PK - Pakistan 2
PT - Portogallo 2
SV - El Salvador 2
TN - Tunisia 2
TT - Trinidad e Tobago 2
AL - Albania 1
AZ - Azerbaigian 1
BW - Botswana 1
BY - Bielorussia 1
BZ - Belize 1
CI - Costa d'Avorio 1
CL - Cile 1
CY - Cipro 1
DK - Danimarca 1
DZ - Algeria 1
EG - Egitto 1
GY - Guiana 1
HN - Honduras 1
JM - Giamaica 1
KE - Kenya 1
LC - Santa Lucia 1
MD - Moldavia 1
MY - Malesia 1
NI - Nicaragua 1
PR - Porto Rico 1
QA - Qatar 1
RS - Serbia 1
SA - Arabia Saudita 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
UY - Uruguay 1
Totale 5.005
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Città #
Fairfield 271
Ashburn 264
San Jose 197
Woodbridge 184
Santa Clara 177
Singapore 155
Chandler 147
Ann Arbor 133
Seattle 109
Houston 101
Wilmington 98
Vienna 94
Cambridge 83
Council Bluffs 77
Beijing 63
Boardman 62
Jacksonville 57
The Dalles 57
Moscow 53
Dearborn 40
Lawrence 33
Los Angeles 33
Medford 33
Amman 32
Lauterbourg 31
New York 29
Dublin 27
Seoul 24
Des Moines 23
Milan 23
Ho Chi Minh City 19
North Charleston 19
Buffalo 18
Dong Ket 18
Ottawa 16
Florence 15
Hanoi 15
Rome 14
São Paulo 14
Warsaw 14
San Diego 13
Brussels 12
Redwood City 11
Tokyo 11
Falkenstein 9
Brooklyn 8
London 8
Dhaka 7
Helsinki 7
Las Vegas 7
Montreal 7
Ankara 6
Boston 6
Dallas 6
Lanzhou 6
Tashkent 6
Amsterdam 5
Bologna 5
Chicago 5
Frankfurt am Main 5
Hefei 5
Hong Kong 5
Munich 5
Orem 5
Rio de Janeiro 5
Shanghai 5
Taipei 5
Washington 5
Atlanta 4
Auburn Hills 4
Berlin 4
Hamamatsu 4
Hillsboro 4
Karlsruhe 4
Moriyama 4
Palermo 4
Phoenix 4
Pistoia 4
Pohang 4
Portland 4
Turin 4
Verona 4
Wuhan 4
Campinas 3
Chennai 3
Cleveland 3
Genoa 3
Germantown 3
Haiphong 3
Kenitra 3
Mumbai 3
Poplar 3
Rochester 3
San Francisco 3
Tampa 3
Bangalore 2
Bari 2
Belo Horizonte 2
Bridgetown 2
Cagliari 2
Totale 3.168
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Nome #
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 232
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 195
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 177
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 176
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 174
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 173
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 172
Resistance transition in metal oxides induced by electronic threshold switching 171
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 166
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 161
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 158
Size-dependent temperature instability in NiO–based resistive switching memory 155
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 154
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 154
Ion migration model for resistive switching in transition metal oxides 154
Filament diffusion model for simulating reset and retention processes in RRAM 153
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 150
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 148
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 147
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 146
Switching of nanosized filaments in NiO by conductive atomic force microscopy 144
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 142
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 141
Resistance-dependent switching in NiO-based filamentary RRAM devices 139
Nanowire-based resistive switching memories: devices, operation and scaling 136
Size-dependent retention time in NiO-based resistive switching memories 136
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 134
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 131
Reset instability in pulsed-operated unipolar resistive switching memory 123
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 119
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 116
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 116
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 115
Totale 5.008
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Categoria #
all - tutte 15.687
article - articoli 8.590
book - libri 0
conference - conferenze 7.097
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 31.374
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022225 0 0 30 31 18 4 21 11 11 11 29 59
2022/2023363 44 22 40 27 41 50 2 26 79 2 20 10
2023/2024139 14 26 12 12 2 14 9 4 0 20 0 26
2024/2025637 3 14 20 21 190 39 13 76 117 21 67 56
2025/20261.879 396 356 61 81 100 127 228 92 58 189 34 157
2026/2027136 25 51 60 0 0 0 0 0 0 0 0 0
Totale 5.008