NARDI, FEDERICO
 Distribuzione geografica
Continente #
NA - Nord America 1.814
EU - Europa 543
AS - Asia 209
SA - Sud America 2
Totale 2.568
Nazione #
US - Stati Uniti d'America 1.798
UA - Ucraina 95
AT - Austria 90
DE - Germania 67
SG - Singapore 66
IT - Italia 65
SE - Svezia 43
FI - Finlandia 40
GB - Regno Unito 40
CN - Cina 36
JO - Giordania 32
VN - Vietnam 28
IE - Irlanda 27
FR - Francia 21
SI - Slovenia 18
CA - Canada 16
KR - Corea 16
RU - Federazione Russa 15
BE - Belgio 13
JP - Giappone 12
IN - India 8
TW - Taiwan 6
CH - Svizzera 2
HK - Hong Kong 2
IR - Iran 2
NL - Olanda 2
RO - Romania 2
BO - Bolivia 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
ES - Italia 1
MY - Malesia 1
PE - Perù 1
Totale 2.568
Città #
Fairfield 271
Woodbridge 184
Chandler 147
Ann Arbor 133
Ashburn 118
Seattle 107
Santa Clara 100
Houston 98
Wilmington 97
Vienna 93
Cambridge 83
Jacksonville 57
Singapore 47
Dearborn 40
Boardman 33
Lawrence 33
Medford 33
Amman 32
Dublin 26
Des Moines 23
Dong Ket 18
Ottawa 16
Beijing 14
San Diego 13
Brussels 12
New York 12
Redwood City 11
Falkenstein 9
Helsinki 7
Lanzhou 6
Los Angeles 6
London 5
Milan 5
Auburn Hills 4
Hamamatsu 4
Karlsruhe 4
Moriyama 4
Pistoia 4
Pohang 4
Portland 4
Seoul 4
Shanghai 4
Taipei 4
Washington 4
Berlin 3
Germantown 3
Hefei 3
The Dalles 3
Verona 3
Bangalore 2
Chongqing 2
Cluj-napoca 2
Dalmine 2
Fremont 2
Honcho 2
Kunming 2
Newark 2
Seongnam 2
Southend 2
Velikiy Novgorod 2
Aachen 1
Acton 1
Amsterdam 1
Atlanta 1
Austin 1
Barcelona 1
Bhubaneswar 1
Central 1
Central District 1
Changchun 1
Clifton 1
Dresden 1
Frankfurt An Der Oder 1
Gif-sur-yvette 1
Groningen 1
Indiana 1
Kish 1
Kyjov 1
La Paz 1
Laveno Mombello 1
Lima 1
Moscow 1
Mountain View 1
New Delhi 1
Norwalk 1
Pisa 1
Quzhou 1
Rochester 1
Rome 1
San Jose 1
Torre Del Greco 1
Tronoh 1
Tronville 1
Ufa 1
Vejle 1
Villeurbanne 1
Totale 2.006
Nome #
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 116
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 104
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 103
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 97
Size-dependent temperature instability in NiO–based resistive switching memory 96
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 96
Resistance transition in metal oxides induced by electronic threshold switching 95
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 94
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 93
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 92
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 91
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 90
Switching of nanosized filaments in NiO by conductive atomic force microscopy 89
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 88
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 86
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 77
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 76
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 75
Filament diffusion model for simulating reset and retention processes in RRAM 73
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 72
Nanowire-based resistive switching memories: devices, operation and scaling 67
Size-dependent retention time in NiO-based resistive switching memories 67
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 66
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 64
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 63
Ion migration model for resistive switching in transition metal oxides 63
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 61
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 59
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 56
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 56
Resistance-dependent switching in NiO-based filamentary RRAM devices 54
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 47
Reset instability in pulsed-operated unipolar resistive switching memory 45
Totale 2.571
Categoria #
all - tutte 9.125
article - articoli 5.050
book - libri 0
conference - conferenze 4.075
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 18.250


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020468 0 0 0 0 76 74 87 54 71 23 62 21
2020/2021287 27 20 31 15 37 13 26 31 9 25 16 37
2021/2022298 19 54 30 31 18 4 21 11 11 11 29 59
2022/2023363 44 22 40 27 41 50 2 26 79 2 20 10
2023/2024139 14 26 12 12 2 14 9 4 0 20 0 26
2024/2025215 3 14 20 21 157 0 0 0 0 0 0 0
Totale 2.571