NARDI, FEDERICO
 Distribuzione geografica
Continente #
NA - Nord America 2.233
EU - Europa 1.163
AS - Asia 615
SA - Sud America 121
AF - Africa 11
Totale 4.143
Nazione #
US - Stati Uniti d'America 2.200
RU - Federazione Russa 564
SG - Singapore 281
CN - Cina 146
BR - Brasile 102
UA - Ucraina 96
AT - Austria 91
IT - Italia 81
DE - Germania 75
GB - Regno Unito 56
VN - Vietnam 51
SE - Svezia 45
FI - Finlandia 42
JO - Giordania 32
IE - Irlanda 28
CA - Canada 25
FR - Francia 24
KR - Corea 18
SI - Slovenia 18
IN - India 17
JP - Giappone 15
BE - Belgio 13
BD - Bangladesh 9
TR - Turchia 8
HK - Hong Kong 7
TW - Taiwan 7
AR - Argentina 6
NL - Olanda 6
PL - Polonia 6
ES - Italia 5
IQ - Iraq 5
UZ - Uzbekistan 5
VE - Venezuela 5
ZA - Sudafrica 4
EC - Ecuador 3
IR - Iran 3
MA - Marocco 3
MX - Messico 3
RO - Romania 3
AE - Emirati Arabi Uniti 2
BO - Bolivia 2
CH - Svizzera 2
CZ - Repubblica Ceca 2
ID - Indonesia 2
OM - Oman 2
PE - Perù 2
PK - Pakistan 2
AZ - Azerbaigian 1
BB - Barbados 1
BW - Botswana 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
DK - Danimarca 1
EG - Egitto 1
GY - Guiana 1
HN - Honduras 1
HU - Ungheria 1
LC - Santa Lucia 1
MD - Moldavia 1
MY - Malesia 1
PT - Portogallo 1
RS - Serbia 1
SA - Arabia Saudita 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
Totale 4.143
Città #
Fairfield 271
Ashburn 225
Woodbridge 184
Santa Clara 173
Singapore 150
Chandler 147
Ann Arbor 133
Seattle 109
Houston 100
Wilmington 98
Vienna 94
Cambridge 83
Beijing 61
Jacksonville 57
Moscow 53
Dearborn 40
Boardman 33
Lawrence 33
Medford 33
Amman 32
Council Bluffs 31
Los Angeles 28
Dublin 27
Des Moines 23
New York 23
Dong Ket 18
Ottawa 16
Buffalo 14
Florence 13
San Diego 13
São Paulo 13
Brussels 12
Redwood City 11
The Dalles 11
Falkenstein 9
San Jose 9
Milan 8
Helsinki 7
Ho Chi Minh City 7
London 7
Ankara 6
Boston 6
Lanzhou 6
Dallas 5
Hanoi 5
Hefei 5
Hong Kong 5
Montreal 5
Munich 5
Rio de Janeiro 5
Tashkent 5
Warsaw 5
Atlanta 4
Auburn Hills 4
Berlin 4
Brooklyn 4
Chicago 4
Hamamatsu 4
Karlsruhe 4
Moriyama 4
Pistoia 4
Pohang 4
Portland 4
Seoul 4
Shanghai 4
Taipei 4
Washington 4
Amsterdam 3
Campinas 3
Chennai 3
Dhaka 3
Germantown 3
Kenitra 3
Poplar 3
Tampa 3
Tokyo 3
Verona 3
Bangalore 2
Belo Horizonte 2
Calgary 2
Caracas 2
Chongqing 2
Cluj-napoca 2
Curitiba 2
Dalmine 2
Detroit 2
Formosa 2
Fremont 2
Honcho 2
Itapevi 2
Johannesburg 2
Kent 2
Kunming 2
Lanús 2
Lima 2
Manchester 2
Mumbai 2
Newark 2
Nova Iguaçu 2
Phoenix 2
Totale 2.608
Nome #
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 196
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 160
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 155
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 152
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 152
Resistance transition in metal oxides induced by electronic threshold switching 148
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 148
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 143
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 139
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 138
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 136
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 133
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 131
Size-dependent temperature instability in NiO–based resistive switching memory 130
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 129
Filament diffusion model for simulating reset and retention processes in RRAM 127
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 126
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 125
Ion migration model for resistive switching in transition metal oxides 123
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 119
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 118
Switching of nanosized filaments in NiO by conductive atomic force microscopy 117
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 113
Nanowire-based resistive switching memories: devices, operation and scaling 113
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 112
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 111
Resistance-dependent switching in NiO-based filamentary RRAM devices 106
Reset instability in pulsed-operated unipolar resistive switching memory 100
Size-dependent retention time in NiO-based resistive switching memories 99
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 94
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 89
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 86
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 78
Totale 4.146
Categoria #
all - tutte 13.454
article - articoli 7.391
book - libri 0
conference - conferenze 6.063
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 26.908


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/2021144 0 0 0 0 0 0 26 31 9 25 16 37
2021/2022298 19 54 30 31 18 4 21 11 11 11 29 59
2022/2023363 44 22 40 27 41 50 2 26 79 2 20 10
2023/2024139 14 26 12 12 2 14 9 4 0 20 0 26
2024/2025637 3 14 20 21 190 39 13 76 117 21 67 56
2025/20261.153 396 356 61 81 100 127 32 0 0 0 0 0
Totale 4.146