NARDI, FEDERICO
 Distribuzione geografica
Continente #
NA - Nord America 2.538
EU - Europa 1.226
AS - Asia 761
SA - Sud America 129
AF - Africa 14
Totale 4.668
Nazione #
US - Stati Uniti d'America 2.503
RU - Federazione Russa 564
SG - Singapore 302
CN - Cina 183
BR - Brasile 107
UA - Ucraina 96
AT - Austria 91
VN - Vietnam 89
IT - Italia 83
DE - Germania 81
GB - Regno Unito 61
FR - Francia 57
SE - Svezia 45
FI - Finlandia 42
KR - Corea 40
JO - Giordania 33
IE - Irlanda 28
CA - Canada 26
JP - Giappone 24
IN - India 20
SI - Slovenia 18
BD - Bangladesh 15
PL - Polonia 15
BE - Belgio 13
NL - Olanda 8
TR - Turchia 8
TW - Taiwan 8
AR - Argentina 7
ES - Italia 7
HK - Hong Kong 7
IQ - Iraq 6
UZ - Uzbekistan 6
VE - Venezuela 6
ID - Indonesia 4
RO - Romania 4
ZA - Sudafrica 4
EC - Ecuador 3
IR - Iran 3
MA - Marocco 3
MX - Messico 3
AE - Emirati Arabi Uniti 2
BB - Barbados 2
BO - Bolivia 2
CH - Svizzera 2
CZ - Repubblica Ceca 2
HU - Ungheria 2
OM - Oman 2
PE - Perù 2
PK - Pakistan 2
TN - Tunisia 2
AL - Albania 1
AZ - Azerbaigian 1
BW - Botswana 1
BY - Bielorussia 1
CI - Costa d'Avorio 1
CL - Cile 1
CR - Costa Rica 1
CY - Cipro 1
DK - Danimarca 1
DZ - Algeria 1
EG - Egitto 1
GY - Guiana 1
HN - Honduras 1
KE - Kenya 1
LC - Santa Lucia 1
LT - Lituania 1
MD - Moldavia 1
MY - Malesia 1
PH - Filippine 1
PT - Portogallo 1
RS - Serbia 1
SA - Arabia Saudita 1
SY - Repubblica araba siriana 1
TH - Thailandia 1
TT - Trinidad e Tobago 1
Totale 4.668
Città #
Fairfield 271
Ashburn 255
Woodbridge 184
Santa Clara 173
San Jose 164
Singapore 153
Chandler 147
Ann Arbor 133
Seattle 109
Houston 100
Wilmington 98
Vienna 94
Cambridge 83
Beijing 62
Jacksonville 57
The Dalles 57
Moscow 53
Council Bluffs 42
Dearborn 40
Boardman 33
Lawrence 33
Medford 33
Amman 32
Lauterbourg 31
Los Angeles 30
New York 28
Dublin 27
Seoul 24
Des Moines 23
North Charleston 19
Dong Ket 18
Buffalo 17
Ho Chi Minh City 17
Ottawa 16
São Paulo 14
Warsaw 14
Florence 13
Hanoi 13
San Diego 13
Brussels 12
Redwood City 11
Tokyo 11
Falkenstein 9
London 8
Milan 8
Helsinki 7
Las Vegas 7
Ankara 6
Boston 6
Dhaka 6
Lanzhou 6
Tashkent 6
Amsterdam 5
Chicago 5
Dallas 5
Frankfurt am Main 5
Hefei 5
Hong Kong 5
Montreal 5
Munich 5
Rio de Janeiro 5
Shanghai 5
Taipei 5
Washington 5
Atlanta 4
Auburn Hills 4
Berlin 4
Brooklyn 4
Hamamatsu 4
Hillsboro 4
Karlsruhe 4
Moriyama 4
Orem 4
Pistoia 4
Pohang 4
Portland 4
Wuhan 4
Campinas 3
Chennai 3
Germantown 3
Haiphong 3
Kenitra 3
Mumbai 3
Poplar 3
Tampa 3
Verona 3
Bangalore 2
Belo Horizonte 2
Bridgetown 2
Calgary 2
Caracas 2
Cardiff 2
Chongqing 2
Cluj-napoca 2
Curitiba 2
Da Nang 2
Dalmine 2
Detroit 2
Formosa 2
Foshan 2
Totale 2.993
Nome #
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 216
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 179
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 169
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 169
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 167
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 166
Resistance transition in metal oxides induced by electronic threshold switching 165
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 161
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 155
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 153
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 150
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 149
Size-dependent temperature instability in NiO–based resistive switching memory 146
Filament diffusion model for simulating reset and retention processes in RRAM 146
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 146
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 142
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 141
Switching of nanosized filaments in NiO by conductive atomic force microscopy 140
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 140
Ion migration model for resistive switching in transition metal oxides 137
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 136
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 131
Resistance-dependent switching in NiO-based filamentary RRAM devices 130
Nanowire-based resistive switching memories: devices, operation and scaling 127
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 126
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 126
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 125
Reset instability in pulsed-operated unipolar resistive switching memory 114
Size-dependent retention time in NiO-based resistive switching memories 109
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 107
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 106
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 101
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 96
Totale 4.671
Categoria #
all - tutte 14.333
article - articoli 7.860
book - libri 0
conference - conferenze 6.473
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 28.666


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2020/202178 0 0 0 0 0 0 0 0 0 25 16 37
2021/2022298 19 54 30 31 18 4 21 11 11 11 29 59
2022/2023363 44 22 40 27 41 50 2 26 79 2 20 10
2023/2024139 14 26 12 12 2 14 9 4 0 20 0 26
2024/2025637 3 14 20 21 190 39 13 76 117 21 67 56
2025/20261.678 396 356 61 81 100 127 228 92 58 179 0 0
Totale 4.671