NARDI, FEDERICO
 Distribuzione geografica
Continente #
NA - Nord America 1.667
EU - Europa 528
AS - Asia 173
SA - Sud America 1
Totale 2.369
Nazione #
US - Stati Uniti d'America 1.651
UA - Ucraina 95
AT - Austria 90
IT - Italia 64
DE - Germania 54
SE - Svezia 43
FI - Finlandia 40
GB - Regno Unito 39
CN - Cina 36
JO - Giordania 32
SG - Singapore 30
VN - Vietnam 28
IE - Irlanda 27
FR - Francia 21
SI - Slovenia 18
CA - Canada 16
KR - Corea 16
RU - Federazione Russa 15
BE - Belgio 13
JP - Giappone 12
IN - India 8
TW - Taiwan 6
CH - Svizzera 2
HK - Hong Kong 2
IR - Iran 2
NL - Olanda 2
RO - Romania 2
CZ - Repubblica Ceca 1
DK - Danimarca 1
ES - Italia 1
MY - Malesia 1
PE - Perù 1
Totale 2.369
Città #
Fairfield 271
Woodbridge 184
Chandler 147
Ann Arbor 133
Ashburn 115
Seattle 107
Houston 98
Wilmington 97
Vienna 93
Cambridge 83
Jacksonville 57
Dearborn 40
Lawrence 33
Medford 33
Amman 32
Dublin 26
Des Moines 23
Dong Ket 18
Singapore 18
Ottawa 16
Beijing 14
San Diego 13
Brussels 12
New York 12
Redwood City 11
Helsinki 7
Lanzhou 6
London 5
Milan 5
Auburn Hills 4
Hamamatsu 4
Los Angeles 4
Moriyama 4
Pistoia 4
Pohang 4
Portland 4
Seoul 4
Shanghai 4
Taipei 4
Washington 4
Berlin 3
Germantown 3
Hefei 3
Verona 3
Bangalore 2
Chongqing 2
Cluj-napoca 2
Dalmine 2
Fremont 2
Honcho 2
Kunming 2
Newark 2
Seongnam 2
Southend 2
Velikiy Novgorod 2
Aachen 1
Acton 1
Amsterdam 1
Atlanta 1
Austin 1
Barcelona 1
Bhubaneswar 1
Central 1
Central District 1
Changchun 1
Clifton 1
Dresden 1
Frankfurt An Der Oder 1
Gif-sur-yvette 1
Groningen 1
Indiana 1
Kish 1
Kyjov 1
Laveno Mombello 1
Lima 1
Moscow 1
Mountain View 1
New Delhi 1
Norwalk 1
Pisa 1
Quzhou 1
Rochester 1
Rome 1
San Jose 1
Santa Clara 1
Torre Del Greco 1
Tronoh 1
Tronville 1
Ufa 1
Vejle 1
Villeurbanne 1
Totale 1.823
Nome #
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 104
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 97
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 95
Size-dependent temperature instability in NiO–based resistive switching memory 92
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 91
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 90
Resistance transition in metal oxides induced by electronic threshold switching 89
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 89
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 87
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 86
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 86
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 84
Switching of nanosized filaments in NiO by conductive atomic force microscopy 84
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 82
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 80
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 73
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 71
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 69
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 67
Filament diffusion model for simulating reset and retention processes in RRAM 66
Size-dependent retention time in NiO-based resistive switching memories 63
Nanowire-based resistive switching memories: devices, operation and scaling 62
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 60
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 59
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 58
Ion migration model for resistive switching in transition metal oxides 57
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 53
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 52
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 51
Resistance-dependent switching in NiO-based filamentary RRAM devices 49
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 47
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 42
Reset instability in pulsed-operated unipolar resistive switching memory 37
Totale 2.372
Categoria #
all - tutte 8.007
article - articoli 4.431
book - libri 0
conference - conferenze 3.576
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 16.014


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020568 0 39 14 47 76 74 87 54 71 23 62 21
2020/2021287 27 20 31 15 37 13 26 31 9 25 16 37
2021/2022298 19 54 30 31 18 4 21 11 11 11 29 59
2022/2023363 44 22 40 27 41 50 2 26 79 2 20 10
2023/2024139 14 26 12 12 2 14 9 4 0 20 0 26
2024/202516 3 13 0 0 0 0 0 0 0 0 0 0
Totale 2.372