NARDI, FEDERICO
 Distribuzione geografica
Continente #
NA - Nord America 1.652
EU - Europa 519
AS - Asia 142
SA - Sud America 1
Totale 2.314
Nazione #
US - Stati Uniti d'America 1.636
UA - Ucraina 95
AT - Austria 90
IT - Italia 55
DE - Germania 54
SE - Svezia 43
FI - Finlandia 40
GB - Regno Unito 39
CN - Cina 35
JO - Giordania 32
VN - Vietnam 28
IE - Irlanda 27
FR - Francia 21
SI - Slovenia 18
CA - Canada 16
KR - Corea 16
RU - Federazione Russa 15
BE - Belgio 13
JP - Giappone 12
IN - India 8
TW - Taiwan 6
CH - Svizzera 2
HK - Hong Kong 2
IR - Iran 2
NL - Olanda 2
RO - Romania 2
CZ - Repubblica Ceca 1
DK - Danimarca 1
ES - Italia 1
MY - Malesia 1
PE - Perù 1
Totale 2.314
Città #
Fairfield 271
Woodbridge 184
Chandler 147
Ann Arbor 133
Ashburn 114
Seattle 107
Houston 98
Wilmington 97
Vienna 93
Cambridge 83
Jacksonville 57
Dearborn 40
Lawrence 33
Medford 33
Amman 32
Dublin 26
Des Moines 23
Dong Ket 18
Ottawa 16
Beijing 14
San Diego 13
Brussels 12
Redwood City 11
Helsinki 7
Lanzhou 6
London 5
Milan 5
Auburn Hills 4
Hamamatsu 4
Los Angeles 4
Moriyama 4
New York 4
Pistoia 4
Pohang 4
Portland 4
Seoul 4
Taipei 4
Berlin 3
Germantown 3
Hefei 3
Shanghai 3
Verona 3
Bangalore 2
Chongqing 2
Cluj-napoca 2
Dalmine 2
Fremont 2
Honcho 2
Kunming 2
Newark 2
Seongnam 2
Southend 2
Velikiy Novgorod 2
Aachen 1
Acton 1
Amsterdam 1
Atlanta 1
Austin 1
Barcelona 1
Bhubaneswar 1
Central 1
Central District 1
Changchun 1
Dresden 1
Frankfurt An Der Oder 1
Gif-sur-yvette 1
Groningen 1
Indiana 1
Kish 1
Kyjov 1
Laveno Mombello 1
Lima 1
Moscow 1
Mountain View 1
New Delhi 1
Norwalk 1
Pisa 1
Quzhou 1
Rochester 1
Rome 1
San Jose 1
Torre Del Greco 1
Tronoh 1
Tronville 1
Ufa 1
Vejle 1
Villeurbanne 1
Totale 1.789
Nome #
Read-disturb limited reliability of multilevel NiO-based resistive-switching memory 102
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 97
Reset current reduction and set-reset instabilities in unipolar NiO RRAM 93
Size-dependent temperature instability in NiO–based resistive switching memory 90
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 89
Complementary switching in metal oxides: toward diode-less crossbar RRAMs 88
Resistance transition in metal oxides induced by electronic threshold switching 87
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 87
Evidence for threshold switching in the set process of NiO-based RRAM and physical modeling for set, reset, retention and disturb prediction 86
Nanowire-based RRAM crossbar memory with metallic core–oxide shell nanostructure 84
Switching of nanosized filaments in NiO by conductive atomic force microscopy 84
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 84
Reliability of NiO-based resistive switching memory (ReRAM) elements with pillar W bottom electrode 82
Bipolar-switching model of RRAM by field- and temperature-activated ion migration 79
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 78
TRADE-OFF BETWEEN DATA RETENTION AND RESET IN NIO RRAMS 72
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 69
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 68
Filament diffusion model for simulating reset and retention processes in RRAM 66
Resistance drift model for conductive-bridge (CB) RAM by filament surface relaxation 66
Nanowire-based resistive switching memories: devices, operation and scaling 61
Size-dependent retention time in NiO-based resistive switching memories 61
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 59
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 57
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 57
Ion migration model for resistive switching in transition metal oxides 54
Nanofilament relaxation model for size dependent resistance drift in electrochemical memories 51
Sub-10 microA reset in NiO-based resistive switching memory (RRAM) cells 50
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 49
Resistance-dependent switching in NiO-based filamentary RRAM devices 47
Universal switching and noise characteristics of nanofilaments in metal-oxide RRAMs 44
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 40
Reset instability in pulsed-operated unipolar resistive switching memory 36
Totale 2.317
Categoria #
all - tutte 7.221
article - articoli 4.029
book - libri 0
conference - conferenze 3.192
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 14.442


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019246 0 0 0 0 0 0 0 0 0 54 98 94
2019/2020606 38 39 14 47 76 74 87 54 71 23 62 21
2020/2021287 27 20 31 15 37 13 26 31 9 25 16 37
2021/2022298 19 54 30 31 18 4 21 11 11 11 29 59
2022/2023363 44 22 40 27 41 50 2 26 79 2 20 10
2023/2024100 14 26 12 12 2 14 9 4 0 7 0 0
Totale 2.317