OSMOND, JOHANN

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OSMOND, JOHANN

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Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

2015-01-01 Vanacore, GIOVANNI MARIA; G., Nicotra; Zani, Maurizio; Bollani, Monica; E., Bonera; F., Montalenti; G., Capellini; Isella, Giovanni; Osmond, Johann; A., Picco; F., Boioli; Tagliaferri, Alberto

Gate-controlled rectifying barrier in a two-dimensional hole gas

2008-01-01 Sordan, Roman; Miranda, ALESSIO MASSIMILIA; Osmond, Johann; D., Colombo; Chrastina, Daniel; Isella, Giovanni; H., VON KÄNEL

Ge/Si (100) heterojunction photodiodes fabricated from material grown by low energy plasma enhanced chemical vapour deposition

2008-01-01 Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; R., Kaufmann; H., VON KÄNEL

Heterojunction photodiodes fabricated form Ge/Si (100) layers grown by low-energy plasma-enhanced CVD

2007-01-01 Isella, Giovanni; R., Kaufmann; M., Kummer; Osmond, Johann; H., Von Kaenel

Logic gates with a single Hall bar heterostructure

2006-01-01 Sordan, Roman; Miranda, ALESSIO MASSIMILIA; Osmond, Johann; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans

Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source

2014-01-01 Vanacore, GIOVANNI MARIA; Zani, Maurizio; Bollani, Monica; E., Bonera; G., Nicotra; Osmond, Johann; G., Capellini; Isella, Giovanni; Tagliaferri, Alberto

Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100)

2010-01-01 Vanacore, GIOVANNI MARIA; Zani, Maurizio; Isella, Giovanni; Osmond, Johann; Bollani, Monica; Tagliaferri, Alberto

Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures

2010-01-01 P., Chaisakul; D., Marris Morini; Isella, Giovanni; Chrastina, Daniel; X., Le Roux; E., Gatti; S., Edmond; Osmond, Johann; E., Cassan; L., Vivien

Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

2010-01-01 Vanacore, GIOVANNI MARIA; Zani, Maurizio; Bollani, Monica; Colombo, Davide; Isella, Giovanni; Osmond, Johann; Sordan, Roman; Tagliaferri, Alberto

Ultra low dark current Ge/Si photodiodes with low thermal budget

2009-01-01 Osmond, Johann; Isella, Giovanni; Chrastina, Daniel; R., Kaufmann; M., Acciarri; H., Von Kaenel

Titolo	Data di pubblicazione	Autori
Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source	1-gen-2015	VANACORE, GIOVANNI MARIAG. NicotraZANI, MAURIZIOBOLLANI, MONICAE. BoneraF. MontalentiG. CapelliniISELLA, GIOVANNIOSMOND, JOHANNA. PiccoF. BoioliTAGLIAFERRI, ALBERTO + -
Gate-controlled rectifying barrier in a two-dimensional hole gas	1-gen-2008	SORDAN, ROMANMIRANDA, ALESSIO MASSIMILIAOSMOND, JOHANND. COLOMBOCHRASTINA, DANIELISELLA, GIOVANNIH. VON KÄNEL + -
Ge/Si (100) heterojunction photodiodes fabricated from material grown by low energy plasma enhanced chemical vapour deposition	1-gen-2008	OSMOND, JOHANNISELLA, GIOVANNICHRASTINA, DANIELR. KAUFMANNH. VON KÄNEL + -
Heterojunction photodiodes fabricated form Ge/Si (100) layers grown by low-energy plasma-enhanced CVD	1-gen-2007	ISELLA, GIOVANNIR. KaufmannM. KummerOSMOND, JOHANNH. Von Kaenel + -
Logic gates with a single Hall bar heterostructure	1-gen-2006	SORDAN, ROMANMIRANDA, ALESSIO MASSIMILIAOSMOND, JOHANNCHRASTINA, DANIELISELLA, GIOVANNIVON KÄNEL, HANS
Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source	1-gen-2014	VANACORE, GIOVANNI MARIAZANI, MAURIZIOBOLLANI, MONICAE. BoneraG. NicotraOSMOND, JOHANNG. CapelliniISELLA, GIOVANNITAGLIAFERRI, ALBERTO + -
Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100)	1-gen-2010	VANACORE, GIOVANNI MARIAZANI, MAURIZIOISELLA, GIOVANNIOSMOND, JOHANNBOLLANI, MONICATAGLIAFERRI, ALBERTO
Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures	1-gen-2010	P. ChaisakulD. Marris MoriniISELLA, GIOVANNICHRASTINA, DANIELX. Le RouxE. GattiS. EdmondOSMOND, JOHANNE. CassanL. Vivien + -
Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface	1-gen-2010	VANACORE, GIOVANNI MARIAZANI, MAURIZIOBOLLANI, MONICACOLOMBO, DAVIDEISELLA, GIOVANNIOSMOND, JOHANNSORDAN, ROMANTAGLIAFERRI, ALBERTO
Ultra low dark current Ge/Si photodiodes with low thermal budget	1-gen-2009	OSMOND, JOHANNISELLA, GIOVANNICHRASTINA, DANIELR. KaufmannM. AcciarriH. Von Kaenel + -

RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

OSMOND, JOHANN

Delayed plastic relaxation limit in SiGe islands grown by Ge diffusion from a local source

Gate-controlled rectifying barrier in a two-dimensional hole gas

Ge/Si (100) heterojunction photodiodes fabricated from material grown by low energy plasma enhanced chemical vapour deposition

Heterojunction photodiodes fabricated form Ge/Si (100) layers grown by low-energy plasma-enhanced CVD

Logic gates with a single Hall bar heterostructure

Monitoring the kinetic evolution of self-assembled SiGe islands grown by Ge surface thermal diffusion from a local source

Quantitative investigation of the influence of carbon surfactant on Ge surface diffusion and island nucleation on Si(100)

Quantum-confined Stark effect measurements in Ge/SiGe quantum-well structures

Size Evolution of Ordered SiGe Islands Grown by Surface Thermal Diffusion on Pit-Patterned Si(100) Surface

Ultra low dark current Ge/Si photodiodes with low thermal budget