MACONI, ALESSANDRO

MACONI, ALESSANDRO  

DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)  

Mostra records
Risultati 1 - 17 di 17 (tempo di esecuzione: 0.05 secondi).
Titolo Data di pubblicazione Autori File
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 1-gen-2010 AMOROSO, SALVATORE MARIAMACONI, ALESSANDROMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
A new erase saturation issue in cylindrical junction-less charge-trap memory arrays 1-gen-2012 MACONI, ALESSANDROMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
A new physics-based model for TANOS memories program/erase 1-gen-2008 MONZIO COMPAGNONI, CHRISTIANMACONI, ALESSANDROSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Charge retention phenomena in charge transfer silicon nitride: impact of technology and operating conditions 1-gen-2011 AMOROSO, SALVATORE MARIAMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROMACONI, ALESSANDRO +
Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modeling 1-gen-2010 MONZIO COMPAGNONI, CHRISTIANAMOROSO, SALVATORE MARIAMACONI, ALESSANDROSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Comprehensive investigation of statistical effects in nitride memories - Part II: Scaling analysis and impact on device performance 1-gen-2010 MONZIO COMPAGNONI, CHRISTIANAMOROSO, SALVATORE MARIAMACONI, ALESSANDROSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Comprehensive investigation of the impact of lateral charge migration on retention performance of planar and 3D SONOS devices 1-gen-2012 MACONI, ALESSANDROMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 1-gen-2011 AMOROSO, SALVATORE MARIAMONZIO COMPAGNONI, CHRISTIANMACONI, ALESSANDROSOTTOCORNOLA SPINELLI, ALESSANDRO +
Impact of lateral charge migration on the retention performance of planar and 3D SONOS devices 1-gen-2011 MACONI, ALESSANDROMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 1-gen-2010 MACONI, ALESSANDROMONZIO COMPAGNONI, CHRISTIANAMOROSO, SALVATORE MARIAGHIDOTTI, MICHELEPADOVINI, GIORGIO MICHELESOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
New erase constraint for the junction-less charge-trap memory array in cylindrical geometry 1-gen-2013 MACONI, ALESSANDROMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 1-gen-2009 MONZIO COMPAGNONI, CHRISTIANAMOROSO, SALVATORE MARIAMACONI, ALESSANDROSOTTOCORNOLA SPINELLI, ALESSANDRO +
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices 1-gen-2012 SOTTOCORNOLA SPINELLI, ALESSANDROMONZIO COMPAGNONI, CHRISTIANMACONI, ALESSANDROAMOROSO, SALVATORE MARIALACAITA, ANDREA LEONARDO
Reliability constraints for TANOS memories due to alumina trapping and leakage 1-gen-2010 AMOROSO, SALVATORE MARIAMONZIO COMPAGNONI, CHRISTIANMACONI, ALESSANDROLACAITA, ANDREA LEONARDOSOTTOCORNOLA SPINELLI, ALESSANDRO +
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 1-gen-2011 AMOROSO, SALVATORE MARIAMONZIO COMPAGNONI, CHRISTIANMACONI, ALESSANDROSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Three-dimensional simulation of charge-trap memory programming - Part I: Average behavior 1-gen-2011 AMOROSO, SALVATORE MARIAMACONI, ALESSANDROMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +
Three-dimensional simulation of charge-trap memory programming - Part II: Variability 1-gen-2011 MACONI, ALESSANDROAMOROSO, SALVATORE MARIAMONZIO COMPAGNONI, CHRISTIANSOTTOCORNOLA SPINELLI, ALESSANDROLACAITA, ANDREA LEONARDO +