NARDI, FEDERICO

NARDI, FEDERICO  

DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)  

Mostra records
Risultati 1 - 18 di 18 (tempo di esecuzione: 0.098 secondi).
Titolo Data di pubblicazione Autori File
Complementary switching in oxide-based bipolar resistive switching memory (RRAM) 1-gen-2013 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories 1-gen-2011 NARDI, FEDERICOIELMINI, DANIELECAGLI, CARLO +
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM 1-gen-2012 IELMINI, DANIELENARDI, FEDERICOBALATTI, SIMONE
Filament diffusion model for simulating reset and retention processes in RRAM 1-gen-2011 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE +
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices 1-gen-2009 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE
Nanowire-based resistive switching memories: devices, operation and scaling 1-gen-2013 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO +
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories 1-gen-2011 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO
Reset instability in pulsed-operated unipolar resistive switching memory 1-gen-2011 NARDI, FEDERICOCAGLI, CARLOIELMINI, DANIELE +
Resistance transition in metal oxides induced by electronic threshold switching 1-gen-2009 IELMINI, DANIELECAGLI, CARLONARDI, FEDERICO
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories 1-gen-2010 IELMINI, DANIELENARDI, FEDERICOCAGLI, CARLO
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling 1-gen-2012 NARDI, FEDERICOBALATTI, SIMONEIELMINI, DANIELE +
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires 1-gen-2011 CAGLI, CARLONARDI, FEDERICOIELMINI, DANIELE +
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices 1-gen-2011 IELMINI, DANIELENARDI, FEDERICOCAGLI, CARLO +
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory 1-gen-2012 CHOI, SEOLBALATTI, SIMONENARDI, FEDERICOIELMINI, DANIELE
Size-dependent retention time in NiO-based resistive switching memories 1-gen-2010 IELMINI, DANIELENARDI, FEDERICOCAGLI, CARLOLACAITA, ANDREA LEONARDO
Switching of nanosized filaments in NiO by conductive atomic force microscopy 1-gen-2012 NARDI, FEDERICOIELMINI, DANIELE +
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM 1-gen-2011 IELMINI, DANIELENARDI, FEDERICOCAGLI, CARLO