NARDI, FEDERICO
NARDI, FEDERICO
DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)
Complementary switching in oxide-based bipolar resistive switching memory (RRAM)
2013-01-01 Nardi, Federico; Balatti, Simone; S., Larentis; D. C., Gilmer; Ielmini, Daniele
Control of filament size and reduction of reset current below 10 μA in NiO resistance switching memories
2011-01-01 Nardi, Federico; Ielmini, Daniele; Cagli, Carlo; S., Spiga; M., Fanciulli; L., Goux; D. J., Wouters
Evidence for Voltage-Driven Set/Reset Processes in Bipolar Switching RRAM
2012-01-01 Ielmini, Daniele; Nardi, Federico; Balatti, Simone
Filament diffusion model for simulating reset and retention processes in RRAM
2011-01-01 S., Larentis; Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Modeling of set/reset operations in NiO-based resistive-switching memory (RRAM) devices
2009-01-01 Cagli, Carlo; Nardi, Federico; Ielmini, Daniele
Nanowire-based resistive switching memories: devices, operation and scaling
2013-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico; Y., Zhang
Physical models of size-dependent nanofilament formation and rupture in NiO resistive switching memories
2011-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Reset instability in pulsed-operated unipolar resistive switching memory
2011-01-01 Nardi, Federico; Cagli, Carlo; S., Spiga; Ielmini, Daniele
Resistance transition in metal oxides induced by electronic threshold switching
2009-01-01 Ielmini, Daniele; Cagli, Carlo; Nardi, Federico
Resistance-dependent amplitude of random telegraph-signal noise in resistive switching memories
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study
2012-01-01 Nardi, Federico; S., Larentis; Balatti, Simone; D. C., Gilmer; Ielmini, Daniele
Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part II: Modeling
2012-01-01 S., Larentis; Nardi, Federico; Balatti, Simone; D., Gilmer; Ielmini, Daniele
Resistive-switching crossbar memory based on Ni-NiO core-shell nanowires
2011-01-01 Cagli, Carlo; Nardi, Federico; B., Harteneck; Z., Tan; Y., Zhang; Ielmini, Daniele
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
2011-01-01 Ielmini, Daniele; S., Spiga; Nardi, Federico; Cagli, Carlo; A., Lamperti; E., Cianci; M., Fanciulli
Size-Dependent Drift of Resistance Due to Surface Defect Relaxation in Conductive-Bridge Memory
2012-01-01 Choi, Seol; Balatti, Simone; Nardi, Federico; Ielmini, Daniele
Size-dependent retention time in NiO-based resistive switching memories
2010-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo; Lacaita, ANDREA LEONARDO
Switching of nanosized filaments in NiO by conductive atomic force microscopy
2012-01-01 Nardi, Federico; D., Deleruyelle; S., Spiga; C., Muller; B., Bouteille; Ielmini, Daniele
Universal reset characteristics of unipolar and bipolar metal-oxide RRAM
2011-01-01 Ielmini, Daniele; Nardi, Federico; Cagli, Carlo