VENERONI, ALESSANDRO
 Distribuzione geografica
Continente #
NA - Nord America 2.238
EU - Europa 1.041
AS - Asia 755
SA - Sud America 101
AF - Africa 29
Continente sconosciuto - Info sul continente non disponibili 9
OC - Oceania 1
Totale 4.174
Nazione #
US - Stati Uniti d'America 2.196
RU - Federazione Russa 391
SG - Singapore 266
CN - Cina 212
VN - Vietnam 168
IT - Italia 143
UA - Ucraina 108
BR - Brasile 87
DE - Germania 77
SE - Svezia 61
FI - Finlandia 60
GB - Regno Unito 45
FR - Francia 42
CA - Canada 30
ES - Italia 28
KR - Corea 24
IE - Irlanda 23
NL - Olanda 21
MA - Marocco 17
AT - Austria 15
IN - India 14
JP - Giappone 13
CH - Svizzera 11
HK - Hong Kong 11
PL - Polonia 10
IQ - Iraq 8
BD - Bangladesh 6
JO - Giordania 6
IR - Iran 5
MX - Messico 5
TR - Turchia 5
CO - Colombia 4
KE - Kenya 4
HN - Honduras 3
PK - Pakistan 3
UZ - Uzbekistan 3
VE - Venezuela 3
ZA - Sudafrica 3
AO - Angola 2
AR - Argentina 2
BE - Belgio 2
BY - Bielorussia 2
CL - Cile 2
EC - Ecuador 2
PH - Filippine 2
TT - Trinidad e Tobago 2
TW - Taiwan 2
AU - Australia 1
AZ - Azerbaigian 1
BH - Bahrain 1
CI - Costa d'Avorio 1
CR - Costa Rica 1
ID - Indonesia 1
JM - Giamaica 1
MU - Mauritius 1
MY - Malesia 1
PS - Palestinian Territory 1
SA - Arabia Saudita 1
SI - Slovenia 1
SK - Slovacchia (Repubblica Slovacca) 1
SN - Senegal 1
TH - Thailandia 1
UY - Uruguay 1
Totale 4.165
Città #
Ashburn 302
San Jose 190
Chandler 177
Fairfield 177
Singapore 156
Woodbridge 102
Wilmington 90
Seattle 89
Santa Clara 87
Cambridge 77
Houston 76
Ann Arbor 65
Jacksonville 65
Moscow 65
Beijing 49
Council Bluffs 47
Ho Chi Minh City 47
Hefei 45
Dearborn 41
North Charleston 35
Hanoi 32
Helsinki 29
Málaga 28
Boardman 26
Los Angeles 26
Medford 26
Milan 26
Lawrence 25
Dublin 23
The Dalles 22
Ottawa 20
Rome 19
Dallas 18
Lauterbourg 18
Seoul 18
Buffalo 17
New York 14
Tokyo 13
Dong Ket 12
Vienna 12
Amsterdam 11
Phoenix 11
Casablanca 10
Brooklyn 8
Chennai 8
Da Nang 8
Hong Kong 8
San Diego 8
Columbus 7
Kent 7
Orem 7
São Paulo 7
Warsaw 7
Amman 6
Bern 6
Kenitra 6
Miami 6
Roubaix 6
Turku 6
Des Moines 5
Guangzhou 5
Manassas 5
Mountain View 5
Redwood City 5
Tianjin 5
Verona 5
Washington 5
Chicago 4
Duncan 4
Frankfurt am Main 4
Haiphong 4
Las Vegas 4
London 4
Manchester 4
Philadelphia 4
Seongnam 4
Shanghai 4
Boston 3
Bắc Ninh 3
Falkenstein 3
Florence 3
Naples 3
New Delhi 3
Newark 3
Norwalk 3
Portland 3
Qingdao 3
Turin 3
Antakya 2
Baghdad 2
Baltimore 2
Bari 2
Basra 2
Belo Horizonte 2
Bexley 2
Bogotá 2
Brescia 2
Bến Tre 2
Changchun 2
Città Sant'Angelo 2
Totale 2.686
Nome #
4H SiC epitaxial growth with chlorine addition 225
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 218
A multiscale study of the epitaxial CVD of Si from chlorosilanes 216
A multiscale approach to the study of epitaxial film evolution during MOCVD 212
A combined three-dimensional kinetic Monte Carlo and quantum chemistry study of the CVD of Si on Si(100) surfaces 206
New Achievements on CVD Based Methods for SiC Epitaxial Growth 200
CVD: from process to properties 187
Fluid-dynamics during vapor epitaxy and modeling 182
Multiscale simulation in crystal growth from the vapor phase 179
Epitaxial deposition of silicon carbide films in a horizontal hot-wall CVD reactor 178
Modeling of large-scale horizontal reactor for silicon epitaxy 174
Horizontal hot wall reactor design for epi-SiC growth 172
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling 160
High growth rate process in a SiC horizontal CVD reactor using HCl 157
Modeling of epitaxial silicon carbide deposition 149
Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hotwall CVD Reactor 147
Materials computation towards technological impact: the multiscale approach to thin films deposition 147
Gas-phase and surface kinetics of epitaxial silicon carbide growth involving chlorine-containing species 135
Multiscale simulation of thin films growth: a new paradigm for chemical reaction engineering 127
Multiscale simulation of silicon film growth 127
Simulation of silicon thermal oxidation and stress analysis in flash memory technology 116
Multi-hierachy design approach of a new MOCVD reactor for heteroepitaxial GaAs deposition on large scale Ge substrates for the manufacture of satellite-use solar cells 116
null 103
Silicon carbide growth mechanism from SiH4, SiHCl3 and nC3H8 101
Deposizione epitassiale di carburo di silicio: un esempio di sinergia tra reattoristica e ingegneria delle reazioni chimiche nella progettazione di reattori e processi per la produzione di materiali innovativi 84
Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route 83
null 73
Totale 4.174
Categoria #
all - tutte 11.677
article - articoli 8.323
book - libri 0
conference - conferenze 1.597
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 1.757
Totale 23.354


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022149 0 0 0 15 35 3 10 7 8 22 13 36
2022/2023413 27 27 16 46 35 88 3 23 64 39 8 37
2023/2024165 6 34 10 14 29 36 10 1 1 5 0 19
2024/2025383 1 3 16 8 75 35 6 32 56 17 72 62
2025/20261.661 390 234 70 122 118 69 283 48 63 142 16 106
2026/2027203 12 30 152 9 0 0 0 0 0 0 0 0
Totale 4.174