VENERONI, ALESSANDRO
 Distribuzione geografica
Continente #
NA - Nord America 1.360
EU - Europa 451
AS - Asia 88
AF - Africa 1
Totale 1.900
Nazione #
US - Stati Uniti d'America 1.341
UA - Ucraina 106
DE - Germania 67
SE - Svezia 59
FI - Finlandia 51
IT - Italia 45
VN - Vietnam 31
ES - Italia 28
CN - Cina 24
GB - Regno Unito 24
IE - Irlanda 23
SG - Singapore 20
CA - Canada 19
AT - Austria 13
CH - Svizzera 11
NL - Olanda 11
BE - Belgio 8
JO - Giordania 6
FR - Francia 5
KR - Corea 5
CI - Costa d'Avorio 1
IN - India 1
IR - Iran 1
Totale 1.900
Città #
Chandler 177
Fairfield 177
Ashburn 115
Woodbridge 102
Wilmington 89
Seattle 88
Cambridge 77
Houston 70
Ann Arbor 65
Jacksonville 65
Dearborn 41
Málaga 28
Helsinki 26
Lawrence 25
Medford 25
Dublin 23
Beijing 20
Ottawa 19
Dong Ket 12
Vienna 11
Amsterdam 10
Brussels 7
San Diego 7
Amman 6
Bern 6
New York 6
Des Moines 5
Miami 5
Mountain View 5
Redwood City 5
Washington 5
Milan 4
Seongnam 4
Verona 4
Columbus 3
Duncan 3
Falkenstein 3
Norwalk 3
Santa Clara 3
Paderno Dugnano 2
Portland 2
San Giuliano Milanese 2
Shanghai 2
Tampa 2
Abidjan 1
Auburn Hills 1
Boardman 1
Brescia 1
Ferrara 1
Fribourg 1
London 1
Manchester 1
Nanchang 1
Nanjing 1
Nürnberg 1
Paderborn 1
San Giovanni la Punta 1
San Jose 1
St Louis 1
Tappahannock 1
Terlan 1
Trieste 1
Turin 1
Totale 1.378
Nome #
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 117
Fluid-dynamics during vapor epitaxy and modeling 107
New Achievements on CVD Based Methods for SiC Epitaxial Growth 104
null 103
4H SiC epitaxial growth with chlorine addition 103
A multiscale study of the epitaxial CVD of Si from chlorosilanes 102
Epitaxial deposition of silicon carbide films in a horizontal hot-wall CVD reactor 94
Modeling of large-scale horizontal reactor for silicon epitaxy 90
A multiscale approach to the study of epitaxial film evolution during MOCVD 84
Materials computation towards technological impact: the multiscale approach to thin films deposition 84
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling 82
Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hotwall CVD Reactor 81
Horizontal hot wall reactor design for epi-SiC growth 79
Modeling of epitaxial silicon carbide deposition 76
High growth rate process in a SiC horizontal CVD reactor using HCl 75
null 73
Gas-phase and surface kinetics of epitaxial silicon carbide growth involving chlorine-containing species 70
A combined three-dimensional kinetic Monte Carlo and quantum chemistry study of the CVD of Si on Si(100) surfaces 70
Multiscale simulation of silicon film growth 64
CVD: from process to properties 58
Simulation of silicon thermal oxidation and stress analysis in flash memory technology 41
Multiscale simulation of thin films growth: a new paradigm for chemical reaction engineering 41
Multiscale simulation in crystal growth from the vapor phase 38
Multi-hierachy design approach of a new MOCVD reactor for heteroepitaxial GaAs deposition on large scale Ge substrates for the manufacture of satellite-use solar cells 33
Silicon carbide growth mechanism from SiH4, SiHCl3 and nC3H8 32
Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route 4
Deposizione epitassiale di carburo di silicio: un esempio di sinergia tra reattoristica e ingegneria delle reazioni chimiche nella progettazione di reattori e processi per la produzione di materiali innovativi 4
Totale 1.909
Categoria #
all - tutte 4.835
article - articoli 3.721
book - libri 0
conference - conferenze 539
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 575
Totale 9.670


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019173 0 0 0 0 0 0 0 0 5 34 72 62
2019/2020480 29 38 11 33 51 57 66 36 62 31 59 7
2020/2021258 34 7 22 16 27 11 27 27 8 35 9 35
2021/2022188 5 27 7 15 35 3 10 7 8 22 13 36
2022/2023417 27 27 16 46 35 88 3 25 65 40 8 37
2023/2024143 6 35 11 14 29 36 10 1 1 0 0 0
Totale 1.909