VENERONI, ALESSANDRO
 Distribuzione geografica
Continente #
NA - Nord America 1.431
EU - Europa 450
AS - Asia 133
AF - Africa 1
Totale 2.015
Nazione #
US - Stati Uniti d'America 1.412
UA - Ucraina 106
DE - Germania 67
SG - Singapore 60
SE - Svezia 59
FI - Finlandia 51
IT - Italia 50
VN - Vietnam 31
CN - Cina 29
ES - Italia 28
GB - Regno Unito 24
IE - Irlanda 23
CA - Canada 19
AT - Austria 13
CH - Svizzera 11
NL - Olanda 11
JO - Giordania 6
FR - Francia 5
KR - Corea 5
BE - Belgio 2
CI - Costa d'Avorio 1
IN - India 1
IR - Iran 1
Totale 2.015
Città #
Chandler 177
Fairfield 177
Ashburn 122
Woodbridge 102
Wilmington 89
Seattle 88
Cambridge 77
Houston 70
Ann Arbor 65
Jacksonville 65
Santa Clara 42
Dearborn 41
Singapore 29
Málaga 28
Boardman 26
Helsinki 26
Lawrence 25
Medford 25
Dublin 23
Beijing 20
Ottawa 19
Dong Ket 12
Vienna 11
Amsterdam 10
San Diego 7
Amman 6
Bern 6
New York 6
Des Moines 5
Miami 5
Mountain View 5
Redwood City 5
Washington 5
Milan 4
Seongnam 4
Verona 4
Columbus 3
Duncan 3
Falkenstein 3
Norwalk 3
Paderno Dugnano 2
Portland 2
San Giuliano Milanese 2
Shanghai 2
Tampa 2
Abidjan 1
Auburn Hills 1
Brescia 1
Brussels 1
Ferrara 1
Fribourg 1
London 1
Manchester 1
Nanchang 1
Nanjing 1
Nürnberg 1
Paderborn 1
San Giovanni la Punta 1
San Jose 1
St Louis 1
Tappahannock 1
Terlan 1
Trieste 1
Turin 1
Totale 1.472
Nome #
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 119
New Achievements on CVD Based Methods for SiC Epitaxial Growth 113
Fluid-dynamics during vapor epitaxy and modeling 112
A multiscale study of the epitaxial CVD of Si from chlorosilanes 109
4H SiC epitaxial growth with chlorine addition 105
null 103
Epitaxial deposition of silicon carbide films in a horizontal hot-wall CVD reactor 97
A multiscale approach to the study of epitaxial film evolution during MOCVD 94
Modeling of large-scale horizontal reactor for silicon epitaxy 94
Materials computation towards technological impact: the multiscale approach to thin films deposition 87
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling 86
Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hotwall CVD Reactor 85
Horizontal hot wall reactor design for epi-SiC growth 82
High growth rate process in a SiC horizontal CVD reactor using HCl 80
Modeling of epitaxial silicon carbide deposition 77
A combined three-dimensional kinetic Monte Carlo and quantum chemistry study of the CVD of Si on Si(100) surfaces 76
null 73
Gas-phase and surface kinetics of epitaxial silicon carbide growth involving chlorine-containing species 73
Multiscale simulation of silicon film growth 67
CVD: from process to properties 66
Multiscale simulation of thin films growth: a new paradigm for chemical reaction engineering 46
Multiscale simulation in crystal growth from the vapor phase 46
Simulation of silicon thermal oxidation and stress analysis in flash memory technology 44
Silicon carbide growth mechanism from SiH4, SiHCl3 and nC3H8 35
Multi-hierachy design approach of a new MOCVD reactor for heteroepitaxial GaAs deposition on large scale Ge substrates for the manufacture of satellite-use solar cells 34
Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route 12
Deposizione epitassiale di carburo di silicio: un esempio di sinergia tra reattoristica e ingegneria delle reazioni chimiche nella progettazione di reattori e processi per la produzione di materiali innovativi 9
Totale 2.024
Categoria #
all - tutte 6.216
article - articoli 4.667
book - libri 0
conference - conferenze 740
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 809
Totale 12.432


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020369 0 0 0 0 51 57 66 36 62 31 59 7
2020/2021258 34 7 22 16 27 11 27 27 8 35 9 35
2021/2022188 5 27 7 15 35 3 10 7 8 22 13 36
2022/2023413 27 27 16 46 35 88 3 23 64 39 8 37
2023/2024165 6 34 10 14 29 36 10 1 1 5 0 19
2024/202597 1 3 16 8 69 0 0 0 0 0 0 0
Totale 2.024