RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

VENERONI, ALESSANDRO

VENERONI, ALESSANDRO  

Mostra records
Risultati 1 - 20 di 25 (tempo di esecuzione: 0.033 secondi).
Titolo Data di pubblicazione Autori File
4H SiC epitaxial growth with chlorine addition 1-gen-2006 VENERONI, ALESSANDROMASI, MAURIZIO +
A combined three-dimensional kinetic Monte Carlo and quantum chemistry study of the CVD of Si on Si(100) surfaces 1-gen-2004 CAVALLOTTI, CARLO ALESSANDROBARBATO, ALESSANDROVENERONI, ALESSANDRO
A multiscale approach to the study of epitaxial film evolution during MOCVD 1-gen-2003 CARRA', SERGIOCAVALLOTTI, CARLO ALESSANDROMASI, MAURIZIOMOSCATELLI, DAVIDEVENERONI, ALESSANDRO
A multiscale study of the epitaxial CVD of Si from chlorosilanes 1-gen-2005 CAVALLOTTI, CARLO ALESSANDROMOSCATELLI, DAVIDEVENERONI, ALESSANDRO
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 1-gen-2006 MASI, MAURIZIOMOSCATELLI, DAVIDEVENERONI, ALESSANDRO +
CVD: from process to properties 1-gen-2003 CARRA', SERGIOCAVALLOTTI, CARLO ALESSANDRODI STANISLAO, MARCO SANTEMASI, MAURIZIOVENERONI, ALESSANDRO
Deposizione epitassiale di carburo di silicio: un esempio di sinergia tra reattoristica e ingegneria delle reazioni chimiche nella progettazione di reattori e processi per la produzione di materiali innovativi 1-gen-2004 MASI, MAURIZIOVENERONI, ALESSANDRO +
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling 1-gen-2005 MOSCATELLI, DAVIDEVENERONI, ALESSANDROCAVALLOTTI, CARLO ALESSANDROMASI, MAURIZIO +
Epitaxial deposition of silicon carbide films in a horizontal hot-wall CVD reactor 1-gen-2005 MASI, MAURIZIOVENERONI, ALESSANDRO +
Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hotwall CVD Reactor 1-gen-2005 VENERONI, ALESSANDROMASI, MAURIZIO +
Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route 1-gen-2007 MASI, MAURIZIOVENERONI, ALESSANDROFIORUCCI, ALESSANDROVALENTE, GIANLUCA +
Fluid-dynamics during vapor epitaxy and modeling 1-gen-2003 MASI, MAURIZIODI STANISLAO, MARCO SANTEVENERONI, ALESSANDRO
Gas-phase and surface kinetics of epitaxial silicon carbide growth involving chlorine-containing species 1-gen-2006 VENERONI, ALESSANDROMASI, MAURIZIO
High growth rate process in a SiC horizontal CVD reactor using HCl 1-gen-2006 VENERONI, ALESSANDROZAMOLO, LAURAMASI, MAURIZIO +
Horizontal hot wall reactor design for epi-SiC growth 1-gen-2005 VENERONI, ALESSANDROMASI, MAURIZIO +
Materials computation towards technological impact: the multiscale approach to thin films deposition 1-gen-2005 CAVALLOTTI, CARLO ALESSANDROMOSCATELLI, DAVIDEVENERONI, ALESSANDRO +
Modeling of epitaxial silicon carbide deposition 1-gen-2005 MASI, MAURIZIOMOSCATELLI, DAVIDEVENERONI, ALESSANDRO +
Modeling of large-scale horizontal reactor for silicon epitaxy 1-gen-2005 MASI, MAURIZIOMOSCATELLI, DAVIDEVENERONI, ALESSANDRO
Multi-hierachy design approach of a new MOCVD reactor for heteroepitaxial GaAs deposition on large scale Ge substrates for the manufacture of satellite-use solar cells 1-gen-2005 CAVALLOTTI, CARLO ALESSANDROMASI, MAURIZIOMOSCATELLI, DAVIDEVENERONI, ALESSANDRO
Multiscale simulation in crystal growth from the vapor phase 1-gen-2005 CAVALLOTTI, CARLO ALESSANDRODI STANISLAO, MARCO SANTEMASI, MAURIZIOVENERONI, ALESSANDRO