LAVIZZARI, SIMONE
 Distribuzione geografica
Continente #
NA - Nord America 774
EU - Europa 320
AS - Asia 57
SA - Sud America 1
Totale 1.152
Nazione #
US - Stati Uniti d'America 764
AT - Austria 80
UA - Ucraina 73
IT - Italia 37
DE - Germania 32
SG - Singapore 23
FI - Finlandia 21
SE - Svezia 17
ES - Italia 14
GB - Regno Unito 13
IE - Irlanda 13
JO - Giordania 13
CA - Canada 10
FR - Francia 8
VN - Vietnam 8
CN - Cina 6
NL - Olanda 4
LT - Lituania 3
GR - Grecia 2
KR - Corea 2
TR - Turchia 2
AR - Argentina 1
BE - Belgio 1
CH - Svizzera 1
IL - Israele 1
IN - India 1
JP - Giappone 1
SI - Slovenia 1
Totale 1.152
Città #
Fairfield 111
Woodbridge 86
Chandler 82
Vienna 78
Houston 74
Ashburn 58
Seattle 50
Wilmington 44
Jacksonville 40
Ann Arbor 35
Cambridge 34
Singapore 20
Lawrence 14
Medford 14
Málaga 14
Amman 13
Dublin 13
Des Moines 9
Ottawa 9
Dearborn 8
San Diego 8
Helsinki 7
Milan 5
Beijing 4
Dong Ket 4
Amsterdam 3
Bari 3
Redmond 3
Verona 3
Ankara 2
London 2
Aachen 1
Athens 1
Brussels 1
Buenos Aires 1
Cimitile 1
Columbus 1
Hounslow 1
Islington 1
Montreal 1
Nanchang 1
New York 1
Rome 1
Seongnam 1
Spreitenbach 1
Taramani 1
Tel Aviv 1
Thessaloníki 1
Tokyo 1
Totale 868
Nome #
Random telegraph signal noise in phase change memory devices 112
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation" 104
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2 101
A new transient model for recovery and relaxation oscillations in phase change memories 101
Transient effects of delay, switching and recovery in phase change memory (PCM) devices 94
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices 91
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells 90
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 87
Transient simulation of delay and switching effects in phase change memories 87
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 84
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part II: Physics-based modeling 56
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part I: Experimental study 54
Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices 54
Structural relaxation in chalcogenide-based phase change memories (PCMs): from defect-annihilation kinetic to device-reliability prediction 43
Totale 1.158
Categoria #
all - tutte 3.827
article - articoli 1.928
book - libri 0
conference - conferenze 1.899
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.654


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020210 0 0 0 21 26 24 38 23 34 10 29 5
2020/2021170 20 6 28 2 29 8 13 18 8 14 10 14
2021/2022128 5 18 20 4 11 0 9 11 4 9 9 28
2022/2023214 16 12 13 20 29 22 0 19 40 19 19 5
2023/202480 1 22 7 6 4 3 11 3 2 8 0 13
2024/202516 0 14 2 0 0 0 0 0 0 0 0 0
Totale 1.158