LAVIZZARI, SIMONE
 Distribuzione geografica
Continente #
NA - Nord America 898
EU - Europa 330
AS - Asia 102
SA - Sud America 12
AF - Africa 1
Totale 1.343
Nazione #
US - Stati Uniti d'America 887
AT - Austria 81
UA - Ucraina 73
SG - Singapore 62
IT - Italia 39
DE - Germania 33
FI - Finlandia 22
SE - Svezia 17
ES - Italia 14
GB - Regno Unito 13
IE - Irlanda 13
JO - Giordania 13
BR - Brasile 11
CA - Canada 11
FR - Francia 8
VN - Vietnam 8
CN - Cina 7
LT - Lituania 4
NL - Olanda 4
AM - Armenia 2
GR - Grecia 2
KR - Corea 2
TR - Turchia 2
AR - Argentina 1
AZ - Azerbaigian 1
BE - Belgio 1
CH - Svizzera 1
CZ - Repubblica Ceca 1
DK - Danimarca 1
HU - Ungheria 1
IL - Israele 1
IN - India 1
JP - Giappone 1
KZ - Kazakistan 1
PK - Pakistan 1
PL - Polonia 1
SI - Slovenia 1
ZA - Sudafrica 1
Totale 1.343
Città #
Fairfield 111
Woodbridge 86
Chandler 82
Vienna 79
Houston 74
Santa Clara 74
Ashburn 59
Seattle 50
Singapore 47
Wilmington 44
Jacksonville 40
Ann Arbor 35
Cambridge 34
Boardman 14
Lawrence 14
Medford 14
Málaga 14
Amman 13
Council Bluffs 13
Dublin 13
Des Moines 9
Ottawa 9
Dearborn 8
Helsinki 8
San Diego 8
Milan 7
Beijing 4
Dong Ket 4
Los Angeles 4
Amsterdam 3
Bari 3
Redmond 3
Verona 3
Ankara 2
London 2
Yerevan 2
Aachen 1
Almaty 1
Ananindeua 1
Athens 1
Baku 1
Brussels 1
Buenos Aires 1
Campo Grande 1
Capim Grosso 1
Centurion 1
Chicago 1
Cimitile 1
Columbus 1
Frankfurt am Main 1
Hounslow 1
Islington 1
Lahore 1
Marcionílio Souza 1
Mariana 1
Maringá 1
Montreal 1
Mostardas 1
Nanchang 1
New York 1
Nova Iguaçu 1
Pimenta 1
Piripiri 1
Prague 1
Reston 1
Rome 1
Seongnam 1
Sopron 1
Spreitenbach 1
São Raimundo Nonato 1
Taramani 1
Tel Aviv 1
The Dalles 1
Thessaloníki 1
Tokyo 1
Toronto 1
Warsaw 1
Totale 1.030
Nome #
Random telegraph signal noise in phase change memory devices 125
"Physical interpretation, modeling and impact on phase change memory (PCM) reliability of resistance drift due to chalcogenide structural relaxation" 121
A new transient model for recovery and relaxation oscillations in phase change memories 118
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2 114
Transient effects of delay, switching and recovery in phase change memory (PCM) devices 109
Distributed-Poole-Frenkel modeling of anomalous resistance scaling and fluctuations in phase-change memory (PCM) devices 104
Statistical and scaling behavior of structural relaxation effects in phase change memory (PCM) devices 103
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells 102
Transient simulation of delay and switching effects in phase change memories 100
Statistics of resistance drift due to structural relaxation in phase-change memory arrays 98
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part II: Physics-based modeling 68
Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices 67
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part I: Experimental study 64
Structural relaxation in chalcogenide-based phase change memories (PCMs): from defect-annihilation kinetic to device-reliability prediction 56
Totale 1.349
Categoria #
all - tutte 4.473
article - articoli 2.250
book - libri 0
conference - conferenze 2.223
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.946


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/202044 0 0 0 0 0 0 0 0 0 10 29 5
2020/2021170 20 6 28 2 29 8 13 18 8 14 10 14
2021/2022128 5 18 20 4 11 0 9 11 4 9 9 28
2022/2023214 16 12 13 20 29 22 0 19 40 19 19 5
2023/202480 1 22 7 6 4 3 11 3 2 8 0 13
2024/2025207 0 14 2 1 72 35 4 29 49 1 0 0
Totale 1.349