Surface texturization is usually performed to enhance light absorption in silicon solar Cells. In the work, we describe a maskless plasma process that employs CF4/H2 plasma to create nanoscale structures in silicon. Desirable texturing effect has been achieved by creating the plasma in a range of pressure and RF power of 0.05-0.1 mbar and 200-280 W, respectively. In the different operating conditions the plasma has been investigated by means of an optical emission spectroscopy (OES). The treated silicon surface shows reflectance lower than 10% in the visible region as well as in near-IR region.

Formation of nanostructures in silicon by a maskless plasma process

INZOLI, FEDERICA;PIETRALUNGA, SILVIA MARIA;TAGLIAFERRI, ALBERTO;ZANI, MAURIZIO;
2015-01-01

Abstract

Surface texturization is usually performed to enhance light absorption in silicon solar Cells. In the work, we describe a maskless plasma process that employs CF4/H2 plasma to create nanoscale structures in silicon. Desirable texturing effect has been achieved by creating the plasma in a range of pressure and RF power of 0.05-0.1 mbar and 200-280 W, respectively. In the different operating conditions the plasma has been investigated by means of an optical emission spectroscopy (OES). The treated silicon surface shows reflectance lower than 10% in the visible region as well as in near-IR region.
2015
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/958759
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