Formation of nanostructures in silicon by a maskless plasma process

Surface texturization is usually performed to enhance light absorption in silicon solar Cells. In the work, we describe a maskless plasma process that employs CF4/H2 plasma to create nanoscale structures in silicon. Desirable texturing effect has been achieved by creating the plasma in a range of pressure and RF power of 0.05-0.1 mbar and 200-280 W, respectively. In the different operating conditions the plasma has been investigated by means of an optical emission spectroscopy (OES). The treated silicon surface shows reflectance lower than 10% in the visible region as well as in near-IR region.