The design of MOSFET devices with high carrier mobility requires knowledge the strain in the channel and understanding its effect on the band structure [1,2]. We present an experimental study of strain, composition and electronic structure by Tip Enhanced Raman Scattering and X-Ray Photoelectron Emission Microscopy of SiGe nanostripes on Si(001). We mapped the perpendicular strain profile, composition, work function and valence band with a lateral resolution better than 100 nm. These results give fundamental insight into the strain-induced modification of the valence band inside a single nanostripe. 3D FEM and first-principles calculations are successfully compared to the experimental results. [1] J. Xiang et al., Nature 441 (2006) 489-493 [2] H. Ko et al., Nature 468 (2010) 286–289
Nanoscale mapping of strain, composition and electronic structure in SiGe nano-stripes
VANACORE, GIOVANNI MARIA;BOLLANI, MONICA;CHRASTINA, DANIEL;ISELLA, GIOVANNI;SORDAN, ROMAN;ZANI, MAURIZIO;TAGLIAFERRI, ALBERTO
2011-01-01
Abstract
The design of MOSFET devices with high carrier mobility requires knowledge the strain in the channel and understanding its effect on the band structure [1,2]. We present an experimental study of strain, composition and electronic structure by Tip Enhanced Raman Scattering and X-Ray Photoelectron Emission Microscopy of SiGe nanostripes on Si(001). We mapped the perpendicular strain profile, composition, work function and valence band with a lateral resolution better than 100 nm. These results give fundamental insight into the strain-induced modification of the valence band inside a single nanostripe. 3D FEM and first-principles calculations are successfully compared to the experimental results. [1] J. Xiang et al., Nature 441 (2006) 489-493 [2] H. Ko et al., Nature 468 (2010) 286–289I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.
