We present an improved model for the simulation of the string current in 3D NAND Flash cells, able to reproduce experimental data over a temperature range down to 100 K. Statistical results of the model were then explored using Data Science techniques, allowing to understand the dependence of the percolative behavior of the current on grain size and gate bias condition. This information is useful for poly-Si process optimization.
Data science statistical approach to percolative conduction in Poly-Si based 3D NAND channels
D. G. Refaldi;A. Sottocornola Spinelli;C. Monzio Compagnoni;
2025-01-01
Abstract
We present an improved model for the simulation of the string current in 3D NAND Flash cells, able to reproduce experimental data over a temperature range down to 100 K. Statistical results of the model were then explored using Data Science techniques, allowing to understand the dependence of the percolative behavior of the current on grain size and gate bias condition. This information is useful for poly-Si process optimization.File in questo prodotto:
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