statistiche ricercatore

Continente	#
NA - Nord America	853
EU - Europa	555
AS - Asia	284
SA - Sud America	66
AF - Africa	13
OC - Oceania	3
Continente sconosciuto - Info sul continente non disponibili	1
Totale	1.775

Nazione	#
US - Stati Uniti d'America	835
RU - Federazione Russa	312
SG - Singapore	110
CN - Cina	85
IT - Italia	62
BR - Brasile	58
DE - Germania	35
SE - Svezia	25
FI - Finlandia	21
GB - Regno Unito	21
FR - Francia	18
NL - Olanda	17
CA - Canada	13
VN - Vietnam	13
JO - Giordania	12
ID - Indonesia	11
ES - Italia	9
IE - Irlanda	9
JP - Giappone	7
PL - Polonia	7
TW - Taiwan	6
IN - India	5
IQ - Iraq	5
BD - Bangladesh	4
HK - Hong Kong	4
KR - Corea	4
MA - Marocco	4
BE - Belgio	3
CI - Costa d'Avorio	3
EC - Ecuador	3
EG - Egitto	3
AE - Emirati Arabi Uniti	2
AT - Austria	2
CH - Svizzera	2
CO - Colombia	2
EE - Estonia	2
GE - Georgia	2
JM - Giamaica	2
KG - Kirghizistan	2
LT - Lituania	2
LV - Lettonia	2
NZ - Nuova Zelanda	2
PK - Pakistan	2
TR - Turchia	2
UZ - Uzbekistan	2
VE - Venezuela	2
ZA - Sudafrica	2
AM - Armenia	1
AR - Argentina	1
AU - Australia	1
BG - Bulgaria	1
BY - Bielorussia	1
CZ - Repubblica Ceca	1
HN - Honduras	1
HU - Ungheria	1
IL - Israele	1
IR - Iran	1
KZ - Kazakistan	1
LK - Sri Lanka	1
MX - Messico	1
NP - Nepal	1
PA - Panama	1
SK - Slovacchia (Repubblica Slovacca)	1
TN - Tunisia	1
UA - Ucraina	1
XK - ???statistics.table.value.countryCode.XK???	1
Totale	1.775

Nome	#
A SiOx RRAM-based hardware with spike frequency adaptation for power-saving continual learning in convolutional neural networks	195
Neuromorphic Motion Detection and Orientation Selectivity by Volatile Resistive Switching Memories	174
Physics-based modeling of volatile resistive switching memory (RRAM) for crosspoint selector and neuromorphic computing	154
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion Part I: Numerical Modeling	150
Volatile Resistive Switching Memory Based on Ag Ion Drift/Diffusion - Part II: Compact Modeling	149
Switching Dynamics of Ag Based Filamentary Volatile Resistive Switching Devices--Part I: Experimental Characterization	144
A volatile RRAM synapse for neuromorphic computing	127
Switching Dynamics of Ag-Based Filamentary Volatile Resistive Switching Devices--Part II: Mechanism and Modeling	122
Combining accuracy and plasticity in convolutional neural networks based on resistive memory arrays for autonomous learning	122
A self-adaptive hardware with resistive switching synapses for experience-based neurocomputing	117
Redox memristors with volatile threshold switching behavior for neuromorphic computing	116
Modeling of switching speed and retention time in volatile resistive switching memory by ionic drift and diffusion	116
Decision Making by a Neuromorphic Network of Volatile Resistive Switching Memories	109
Totale	1.795

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2020/2021	103	0	0	0	0	0	51	0	5	9	29	6	3
2021/2022	107	7	9	15	7	21	3	4	7	6	5	13	10
2022/2023	165	17	18	2	23	18	15	1	16	33	12	9	1
2023/2024	131	9	16	6	10	4	25	6	14	2	20	4	15
2024/2025	356	6	3	5	7	82	42	18	31	50	27	50	35
2025/2026	741	261	201	69	79	111	20	0	0	0	0	0	0
Totale													1.795

RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano