VON KÄNEL, HANS
 Distribuzione geografica
Continente #
NA - Nord America 1.100
EU - Europa 398
AS - Asia 104
Continente sconosciuto - Info sul continente non disponibili 3
AF - Africa 1
Totale 1.606
Nazione #
US - Stati Uniti d'America 1.080
AT - Austria 106
IT - Italia 58
UA - Ucraina 56
DE - Germania 46
CN - Cina 40
GB - Regno Unito 35
SG - Singapore 33
ES - Italia 23
FI - Finlandia 21
CA - Canada 20
VN - Vietnam 20
IE - Irlanda 16
SE - Svezia 16
BE - Belgio 9
JP - Giappone 9
FR - Francia 4
CH - Svizzera 3
EU - Europa 3
NL - Olanda 3
PT - Portogallo 2
AE - Emirati Arabi Uniti 1
BJ - Benin 1
HK - Hong Kong 1
Totale 1.606
Città #
Fairfield 147
Ann Arbor 121
Vienna 106
Chandler 94
Wilmington 92
Woodbridge 88
Ashburn 86
Seattle 84
Houston 65
Cambridge 51
Jacksonville 34
Dearborn 30
Málaga 22
Singapore 22
Ottawa 20
Boardman 17
Lawrence 16
Medford 15
Dublin 14
Beijing 12
Des Moines 11
Milan 11
Brussels 9
Auburn Hills 7
Helsinki 7
London 6
Dong Ket 5
Munich 5
San Diego 5
Amsterdam 3
Bern 3
Kunming 3
Norwalk 3
Phoenix 3
Shanghai 3
Turin 3
Fremont 2
Guangzhou 2
Hounslow 2
Los Angeles 2
Mountain View 2
North Bergen 2
Nürnberg 2
Portland 2
Santa Clara 2
Central District 1
Chengdu 1
Cotonou 1
Dallas 1
Dubai 1
Falkenstein 1
Nanchang 1
Nanjing 1
New York 1
Princeton 1
Redmond 1
Redwood City 1
Verona 1
Washington 1
Zamora 1
Totale 1.256
Nome #
X-Ray Nano-Diffraction on Epitaxial Crystals 160
An experimental and theoretical investigation of a magnetically confined dc plasma discharge 144
(Invited) Three-Dimensional Epitaxial Si1-xGex, Ge and SiC Crystals on Deeply Patterned Si Substrates 141
2-D Hole Gas with Two-Subband Occupation in a Strained Ge Channel: Scattering Mechanisms 124
Scaling hetero-epitaxy from layers to three-dimensional crystals 112
Logic gates with a single Hall bar heterostructure 106
Epitaxial Ge-crystal arrays for X-ray detection 106
Characterization of Ge-on-Si virtual substrates and single junction GaAs solar cells 105
Reconstruction of crystal shapes by X-ray nanodiffraction from three-dimensional superlattices 100
High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition 98
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data 96
Strained Si HFETs for microwave applications: state-of-the-art and further approaches 81
Universal Frequency Dependence of the Hopping AC Conductance in p-Ge/GeSi Structures in the Integer Quantum Hall Effect Regime 81
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices 79
Effective g factor of 2D holes in strained Ge quantum wells 70
Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapor deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate 40
Totale 1.643
Categoria #
all - tutte 5.017
article - articoli 4.235
book - libri 0
conference - conferenze 782
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 10.034


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020341 0 0 0 0 49 57 57 34 44 60 27 13
2020/2021192 28 11 14 8 20 7 12 20 13 19 14 26
2021/2022116 1 5 13 7 9 9 6 7 11 12 5 31
2022/2023208 20 20 18 10 21 27 0 14 25 25 12 16
2023/2024109 4 18 4 7 8 20 10 3 1 16 4 14
2024/202570 4 2 18 22 24 0 0 0 0 0 0 0
Totale 1.643