RESNATI, DAVIDE
 Distribuzione geografica
Continente #
NA - Nord America 887
EU - Europa 267
AS - Asia 85
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1.241
Nazione #
US - Stati Uniti d'America 880
IT - Italia 101
AT - Austria 52
CN - Cina 35
SE - Svezia 17
BE - Belgio 16
GB - Regno Unito 16
SG - Singapore 16
VN - Vietnam 16
FI - Finlandia 14
ES - Italia 11
NL - Olanda 11
IE - Irlanda 10
CA - Canada 7
KR - Corea 6
DE - Germania 4
FR - Francia 4
JP - Giappone 4
RU - Federazione Russa 3
BG - Bulgaria 2
IN - India 2
TW - Taiwan 2
CH - Svizzera 1
EE - Estonia 1
EU - Europa 1
HU - Ungheria 1
ID - Indonesia 1
LT - Lituania 1
LV - Lettonia 1
MY - Malesia 1
SA - Arabia Saudita 1
TR - Turchia 1
UA - Ucraina 1
VE - Venezuela 1
Totale 1.241
Città #
Fairfield 127
Woodbridge 90
Ashburn 83
Ann Arbor 75
Seattle 71
Wilmington 64
Chandler 63
Cambridge 55
Houston 53
Vienna 52
Milan 23
Beijing 18
Brussels 16
Singapore 14
Dearborn 12
Medford 12
Dublin 10
Málaga 10
Capelle 9
Lawrence 9
Ferrara 8
San Diego 8
Wuhan 7
Helsinki 6
Ottawa 6
Washington 6
Hefei 4
Boardman 3
Des Moines 3
London 3
Los Angeles 3
Tokyo 3
Boise 2
Falkenstein 2
Kolkata 2
Mapello 2
Pavullo 2
Redwood City 2
Seongdong-gu 2
Shanghai 2
Sofia 2
Taipei 2
Udine 2
Arnold 1
Atlanta 1
Auburn Hills 1
Bad Bellingen 1
Baotou 1
Bresso 1
Budapest 1
Colorno 1
Distrito Federal 1
Dresden 1
Edinburgh 1
Florence 1
Fuzhou 1
Gouda 1
Guelph 1
Incheon 1
Istanbul 1
Jacksonville 1
Kuala Lumpur 1
Kupang 1
Kyoto 1
Lake Forest 1
Leawood 1
Miami 1
Mountain View 1
Nanchang 1
Newark 1
Norwalk 1
Portland 1
Prescot 1
Riga 1
Riyadh 1
Rome 1
Saint Paul 1
Saint Petersburg 1
San Giorgio A Cremano 1
San Mauro Torinese 1
Santa Clara 1
Scandiano 1
Seocho 1
Stockholm 1
Tallinn 1
Zurich 1
Totale 991
Nome #
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 142
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 128
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 123
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 117
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 110
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 102
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 100
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence 98
Modeling of dynamic operation of T-RAM cells 96
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling 88
A single-electron analysis of NAND Flash memory programming 87
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 83
Totale 1.274
Categoria #
all - tutte 4.021
article - articoli 2.654
book - libri 0
conference - conferenze 1.367
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 8.042


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020275 0 0 0 23 42 43 38 30 37 24 26 12
2020/2021153 12 14 2 13 5 12 2 10 17 26 23 17
2021/2022108 2 12 19 4 10 4 2 13 9 4 14 15
2022/2023172 12 5 2 16 28 31 2 15 30 14 13 4
2023/202483 4 14 8 5 3 9 1 10 3 17 0 9
2024/202523 3 0 18 2 0 0 0 0 0 0 0 0
Totale 1.274