statistiche ricercatore

Continente	#
NA - Nord America	1.355
EU - Europa	617
AS - Asia	448
SA - Sud America	46
Continente sconosciuto - Info sul continente non disponibili	34
AF - Africa	26
Totale	2.526

Nazione	#
US - Stati Uniti d'America	1.322
RU - Federazione Russa	227
SG - Singapore	167
CN - Cina	131
IT - Italia	130
AT - Austria	53
VN - Vietnam	44
BR - Brasile	38
DE - Germania	33
GB - Regno Unito	27
FI - Finlandia	26
HK - Hong Kong	24
NL - Olanda	24
CA - Canada	20
MA - Marocco	20
FR - Francia	19
KR - Corea	19
SE - Svezia	18
BE - Belgio	17
ES - Italia	12
JP - Giappone	11
IE - Irlanda	10
IN - India	9
TW - Taiwan	9
BD - Bangladesh	7
LT - Lituania	5
MX - Messico	5
SA - Arabia Saudita	5
UZ - Uzbekistan	4
AZ - Azerbaigian	3
CR - Costa Rica	3
ID - Indonesia	3
PL - Polonia	3
UY - Uruguay	3
ZA - Sudafrica	3
AR - Argentina	2
BG - Bulgaria	2
CH - Svizzera	2
CZ - Repubblica Ceca	2
MY - Malesia	2
PH - Filippine	2
PK - Pakistan	2
TR - Turchia	2
BS - Bahamas	1
CO - Colombia	1
DZ - Algeria	1
EC - Ecuador	1
EE - Estonia	1
EG - Egitto	1
EU - Europa	1
GE - Georgia	1
GT - Guatemala	1
HU - Ungheria	1
IL - Israele	1
JM - Giamaica	1
KE - Kenya	1
LA - Repubblica Popolare Democratica del Laos	1
LB - Libano	1
LV - Lettonia	1
NO - Norvegia	1
PA - Panama	1
PT - Portogallo	1
RO - Romania	1
SV - El Salvador	1
UA - Ucraina	1
VE - Venezuela	1
Totale	2.493

Nome	#
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays	262
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability	248
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays	223
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories	220
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays	218
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise	202
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells	202
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution	199
A single-electron analysis of NAND Flash memory programming	197
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence	192
Modeling of dynamic operation of T-RAM cells	189
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling	174
Totale	2.526

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	75	0	0	0	4	10	4	2	13	9	4	14	15
2022/2023	172	12	5	2	16	28	31	2	15	30	14	13	4
2023/2024	83	4	14	8	5	3	9	1	10	3	17	0	9
2024/2025	274	3	0	18	14	35	39	4	28	36	15	41	41
2025/2026	902	216	145	28	66	35	41	170	50	36	73	14	28
2026/2027	99	21	19	35	24	0	0	0	0	0	0	0	0
Totale													2.526

RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano