RESNATI, DAVIDE
 Distribuzione geografica
Continente #
NA - Nord America 881
EU - Europa 262
AS - Asia 76
Continente sconosciuto - Info sul continente non disponibili 1
SA - Sud America 1
Totale 1.221
Nazione #
US - Stati Uniti d'America 876
IT - Italia 101
AT - Austria 52
CN - Cina 35
SE - Svezia 17
BE - Belgio 16
GB - Regno Unito 16
VN - Vietnam 16
FI - Finlandia 14
NL - Olanda 11
ES - Italia 10
IE - Irlanda 10
SG - Singapore 8
KR - Corea 6
CA - Canada 5
FR - Francia 4
JP - Giappone 4
BG - Bulgaria 2
DE - Germania 2
IN - India 2
RU - Federazione Russa 2
TW - Taiwan 2
CH - Svizzera 1
EE - Estonia 1
EU - Europa 1
HU - Ungheria 1
ID - Indonesia 1
LV - Lettonia 1
MY - Malesia 1
TR - Turchia 1
UA - Ucraina 1
VE - Venezuela 1
Totale 1.221
Città #
Fairfield 127
Woodbridge 90
Ashburn 83
Ann Arbor 75
Seattle 71
Wilmington 64
Chandler 63
Cambridge 55
Houston 53
Vienna 52
Milan 23
Beijing 18
Brussels 16
Dearborn 12
Medford 12
Dublin 10
Málaga 10
Capelle 9
Lawrence 9
Ferrara 8
San Diego 8
Wuhan 7
Helsinki 6
Singapore 6
Washington 6
Hefei 4
Ottawa 4
Boardman 3
Des Moines 3
London 3
Tokyo 3
Boise 2
Kolkata 2
Los Angeles 2
Mapello 2
Pavullo 2
Redwood City 2
Seongdong-gu 2
Shanghai 2
Sofia 2
Taipei 2
Udine 2
Arnold 1
Atlanta 1
Auburn Hills 1
Bad Bellingen 1
Baotou 1
Bresso 1
Budapest 1
Colorno 1
Distrito Federal 1
Dresden 1
Edinburgh 1
Florence 1
Fuzhou 1
Gouda 1
Guelph 1
Incheon 1
Istanbul 1
Jacksonville 1
Kuala Lumpur 1
Kupang 1
Kyoto 1
Lake Forest 1
Leawood 1
Miami 1
Mountain View 1
Nanchang 1
Newark 1
Norwalk 1
Portland 1
Prescot 1
Riga 1
Rome 1
Saint Paul 1
Saint Petersburg 1
San Giorgio A Cremano 1
San Mauro Torinese 1
Santa Clara 1
Scandiano 1
Seocho 1
Stockholm 1
Tallinn 1
Zurich 1
Totale 977
Nome #
Temperature Activation of the String Current and its Variability in 3-D NAND Flash Arrays 140
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part I: Polysilicon-induced variability 126
Temperature Effects in NAND Flash Memories: A Comparison Between 2-D and 3-D Arrays 121
Impact of Temperature on the Amplitude of RTN Fluctuations in 3-D NAND Flash Cells 114
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 110
Investigation of the Program Operation of NAND Flash Cells With a Single-Electron Resolution 101
A Step Ahead Toward a New Microscopic Picture for Charge Trapping/detrapping in Flash Memories 97
Cycling-induced charge trapping/detrapping in Flash memories - Part I: Experimental evidence 96
Modeling of dynamic operation of T-RAM cells 95
Cycling-induced charge trapping/detrapping in Flash memories - Part II: Modeling 87
A single-electron analysis of NAND Flash memory programming 86
Characterization and modeling of temperature effects in 3-D NAND Flash arrays - Part II: Random telegraph noise 81
Totale 1.254
Categoria #
all - tutte 3.738
article - articoli 2.474
book - libri 0
conference - conferenze 1.264
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 7.476


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020319 23 13 8 23 42 43 38 30 37 24 26 12
2020/2021153 12 14 2 13 5 12 2 10 17 26 23 17
2021/2022108 2 12 19 4 10 4 2 13 9 4 14 15
2022/2023172 12 5 2 16 28 31 2 15 30 14 13 4
2023/202483 4 14 8 5 3 9 1 10 3 17 0 9
2024/20253 3 0 0 0 0 0 0 0 0 0 0 0
Totale 1.254