statistiche ricercatore

Continente	#
NA - Nord America	688
EU - Europa	607
AS - Asia	520
SA - Sud America	102
AF - Africa	38
Continente sconosciuto - Info sul continente non disponibili	16
OC - Oceania	1
Totale	1.972

Nazione	#
US - Stati Uniti d'America	668
RU - Federazione Russa	288
SG - Singapore	153
CN - Cina	133
IT - Italia	126
BR - Brasile	87
VN - Vietnam	55
HK - Hong Kong	51
NL - Olanda	43
KR - Corea	38
DE - Germania	33
FR - Francia	32
JP - Giappone	27
GB - Regno Unito	26
MA - Marocco	21
FI - Finlandia	16
IN - India	11
CA - Canada	10
ES - Italia	10
TW - Taiwan	8
IE - Irlanda	7
AT - Austria	6
CI - Costa d'Avorio	6
JO - Giordania	6
PL - Polonia	6
ID - Indonesia	5
UZ - Uzbekistan	5
AR - Argentina	4
BD - Bangladesh	4
IQ - Iraq	4
CH - Svizzera	3
EC - Ecuador	3
MX - Messico	3
PH - Filippine	3
PK - Pakistan	3
SE - Svezia	3
TR - Turchia	3
VE - Venezuela	3
ZA - Sudafrica	3
BE - Belgio	2
BJ - Benin	2
CO - Colombia	2
JM - Giamaica	2
KG - Kirghizistan	2
LT - Lituania	2
PT - Portogallo	2
UY - Uruguay	2
AZ - Azerbaigian	1
BZ - Belize	1
CL - Cile	1
CR - Costa Rica	1
DJ - Gibuti	1
DK - Danimarca	1
EG - Egitto	1
ET - Etiopia	1
GE - Georgia	1
GP - Guadalupe	1
HN - Honduras	1
HT - Haiti	1
IL - Israele	1
KE - Kenya	1
KH - Cambogia	1
LA - Repubblica Popolare Democratica del Laos	1
MY - Malesia	1
NC - Nuova Caledonia	1
RS - Serbia	1
SA - Arabia Saudita	1
TH - Thailandia	1
TM - Turkmenistan	1
TN - Tunisia	1
TZ - Tanzania	1
Totale	1.956

Nome	#
Modeling and Compensation of IR Drop in Crosspoint Accelerators of Neural Networks	231
Modeling and Analysis of Virgin Ge-Rich GST Embedded Phase Change Memories	179
Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology	167
BEOL Process Effects on ePCM Reliability	165
Modeling of oxide-based ECRAM programming by drift-diffusion ion transport	165
Characterization of reset state through energy activation study in Ge-GST based ePCM	159
Enhancing reliability of a strong physical unclonable function (PUF) solution based on virgin-state phase change memory (PCM)	159
TCAD Modeling of Germanium Behavior During Forming Operation in Ge-Rich ePCM	151
Modeling of virgin state and forming operation in embedded phase change memory (PCM)	141
Interaction between forming pulse and integration process flow in ePCM	140
Improving Ge-rich GST ePCM reliability through BEOL engineering	136
Modeling Environment for Ge-rich GST Phase Change Memory Cells	125
Linear compensation of drift and mitigation of drift variations in PCM arrays for highly accurate, energy efficient in-memory computing	54
Totale	1.972

	Totale	Lug	Ago	Sett	Ott	Nov	Dic	Gen	Feb	Mar	Apr	Mag	Giu
2021/2022	41	0	7	1	0	4	2	4	0	9	3	4	7
2022/2023	85	7	11	4	5	11	8	2	8	18	6	4	1
2023/2024	91	4	13	3	9	5	8	12	6	0	15	7	9
2024/2025	333	4	5	3	4	58	40	35	25	44	25	36	54
2025/2026	1.342	201	229	106	111	63	53	230	79	79	91	23	77
2026/2027	71	38	33	0	0	0	0	0	0	0	0	0	0
Totale													1.972

RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano