PAOLUCCI, GIOVANNI MARIA
 Distribuzione geografica
Continente #
NA - Nord America 1.082
EU - Europa 242
AS - Asia 80
AF - Africa 1
OC - Oceania 1
Totale 1.406
Nazione #
US - Stati Uniti d'America 1.057
IT - Italia 79
AT - Austria 61
CA - Canada 25
VN - Vietnam 24
CN - Cina 23
SG - Singapore 22
DE - Germania 19
FI - Finlandia 19
GB - Regno Unito 15
IE - Irlanda 11
NL - Olanda 10
BE - Belgio 6
ES - Italia 6
SE - Svezia 6
CH - Svizzera 3
KR - Corea 3
UA - Ucraina 3
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
FR - Francia 1
HU - Ungheria 1
IN - India 1
JP - Giappone 1
MD - Moldavia 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
RS - Serbia 1
SA - Arabia Saudita 1
TR - Turchia 1
TW - Taiwan 1
Totale 1.406
Città #
Fairfield 181
Woodbridge 119
Seattle 97
Chandler 87
Ann Arbor 82
Wilmington 78
Ashburn 71
Houston 66
Vienna 61
Cambridge 60
Milan 21
Ottawa 21
Dearborn 18
Lawrence 17
Medford 17
Dong Ket 16
Beijing 14
Singapore 13
Dublin 10
Capelle 7
Des Moines 7
Jacksonville 7
Brussels 6
San Diego 5
Boardman 4
Dresden 4
Madrid 4
Dallas 3
Edinburgh 3
London 3
Washington 3
Atlanta 2
Hanover 2
Hebei 2
Helsinki 2
Málaga 2
Pavullo 2
Portland 2
Redwood City 2
Wuhan 2
Zurich 2
Abidjan 1
Amsterdam 1
Auckland 1
Bandar Seri Begawan 1
Belgrade 1
Budapest 1
Chisinau 1
Colorno 1
Denver 1
Duncan 1
Erding 1
Faisalabad 1
Fuzhou 1
Groningen 1
Guelph 1
Istanbul 1
Jinan 1
Kilburn 1
Kuala Lumpur 1
Kumar 1
Lake Forest 1
Leawood 1
Mountain View 1
Nanjing 1
Norwalk 1
Overland Park 1
Redmond 1
Riyadh 1
Roncadelle 1
San Mauro Torinese 1
Scandiano 1
Shanghai 1
Sunnyvale 1
Tianjin 1
Tokyo 1
Vancouver 1
Vittuone 1
Walldorf 1
Totale 1.163
Nome #
First detection of single-electron charging of the floating gate of NAND Flash memory cells 122
Investigation of the turn-on of T-RAM cells under transient conditions 114
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 110
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 108
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 93
Working principles of a DRAM cell based on gated-thyristor bistability 90
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 89
A single-electron analysis of NAND Flash memory programming 87
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 84
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 80
Reliability investigation of T-RAM cells for DRAM applications 74
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 73
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 73
String current in decananometer NAND Flash arrays: a compact-modeling investigation 71
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 68
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 64
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part II: on-field operation and distributed-cycling effects 45
Totale 1.445
Categoria #
all - tutte 4.680
article - articoli 2.787
book - libri 0
conference - conferenze 1.893
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.360


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020359 0 0 0 29 65 59 43 44 47 23 30 19
2020/2021173 44 8 5 18 6 15 2 12 10 13 14 26
2021/2022105 3 10 9 4 4 4 6 15 11 6 8 25
2022/2023222 19 2 0 28 31 39 3 25 46 6 19 4
2023/202494 5 12 9 9 3 9 9 2 1 20 0 15
2024/20258 0 3 4 1 0 0 0 0 0 0 0 0
Totale 1.445