RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

PAOLUCCI, GIOVANNI MARIA
 Distribuzione geografica
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Continente #
NA - Nord America 1.619
EU - Europa 709
AS - Asia 514
SA - Sud America 82
Continente sconosciuto - Info sul continente non disponibili 39
AF - Africa 33
OC - Oceania 2
Totale 2.998
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Nazione #
US - Stati Uniti d'America 1.572
RU - Federazione Russa 302
SG - Singapore 180
IT - Italia 141
CN - Cina 124
VN - Vietnam 77
BR - Brasile 67
AT - Austria 66
HK - Hong Kong 42
CA - Canada 37
DE - Germania 34
NL - Olanda 28
FI - Finlandia 25
GB - Regno Unito 25
FR - Francia 24
KR - Corea 19
MA - Marocco 19
IE - Irlanda 13
TW - Taiwan 11
ES - Italia 10
SE - Svezia 10
IN - India 9
JP - Giappone 9
AR - Argentina 7
CH - Svizzera 7
ID - Indonesia 7
BE - Belgio 6
BD - Bangladesh 5
MX - Messico 5
EC - Ecuador 4
UA - Ucraina 4
UZ - Uzbekistan 4
CZ - Repubblica Ceca 3
IQ - Iraq 3
PH - Filippine 3
PK - Pakistan 3
ZA - Sudafrica 3
AE - Emirati Arabi Uniti 2
BO - Bolivia 2
DZ - Algeria 2
EG - Egitto 2
ET - Etiopia 2
LA - Repubblica Popolare Democratica del Laos 2
NI - Nicaragua 2
NO - Norvegia 2
NZ - Nuova Zelanda 2
SA - Arabia Saudita 2
TR - Turchia 2
AL - Albania 1
AZ - Azerbaigian 1
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
CY - Cipro 1
DO - Repubblica Dominicana 1
GE - Georgia 1
GF - Guiana Francese 1
GR - Grecia 1
HU - Ungheria 1
IR - Iran 1
JM - Giamaica 1
JO - Giordania 1
KE - Kenya 1
LB - Libano 1
LT - Lituania 1
LV - Lettonia 1
MD - Moldavia 1
MY - Malesia 1
PT - Portogallo 1
RS - Serbia 1
SK - Slovacchia (Repubblica Slovacca) 1
SY - Repubblica araba siriana 1
TJ - Tagikistan 1
TN - Tunisia 1
TT - Trinidad e Tobago 1
UG - Uganda 1
UY - Uruguay 1
ZM - Zambia 1
Totale 2.959
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Città #
Fairfield 181
Ashburn 164
Woodbridge 119
San Jose 108
Singapore 106
Seattle 98
Chandler 87
Ann Arbor 82
Wilmington 78
Houston 68
Vienna 63
Cambridge 60
Moscow 54
Santa Clara 54
Council Bluffs 52
Milan 42
Hong Kong 38
Beijing 37
Los Angeles 32
Boardman 21
Ottawa 21
The Dalles 21
Dearborn 18
Ho Chi Minh City 17
Kenitra 17
Lawrence 17
Medford 17
Dong Ket 16
Lauterbourg 14
Buffalo 12
Hanoi 12
Seoul 12
Dublin 11
New York 10
London 9
Tokyo 9
Dallas 8
Des Moines 8
Helsinki 8
São Paulo 8
Capelle 7
Jacksonville 7
Jakarta 7
Rome 7
Atlanta 6
Brussels 6
Las Vegas 6
Taipei 6
Zurich 6
Haiphong 5
Nuremberg 5
San Diego 5
Bologna 4
Dresden 4
Frankfurt am Main 4
Madrid 4
Mexico City 4
North Charleston 4
Oakville 4
Stockholm 4
Bari 3
Chennai 3
Chicago 3
Da Nang 3
Denver 3
Edinburgh 3
Guangzhou 3
Hefei 3
Hsinchu 3
Kent 3
Málaga 3
Naples 3
Orem 3
Prague 3
Shanghai 3
Tashkent 3
Tianjin 3
Toronto 3
Turin 3
Vancouver 3
Washington 3
Addis Ababa 2
Amsterdam 2
Auckland 2
Baghdad 2
Biên Hòa 2
Brasília 2
Buenos Aires 2
Cairo 2
Casablanca 2
Charlotte 2
Dhaka 2
Edison 2
Hangzhou 2
Hanover 2
Hebei 2
Istanbul 2
Johannesburg 2
Managua 2
Montpellier 2
Totale 2.015
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Nome #
Investigation of the turn-on of T-RAM cells under transient conditions 222
First detection of single-electron charging of the floating gate of NAND Flash memory cells 210
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 209
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 198
A single-electron analysis of NAND Flash memory programming 194
Working principles of a DRAM cell based on gated-thyristor bistability 190
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 186
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 182
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 174
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 170
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 165
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 160
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 159
String current in decananometer NAND Flash arrays: a compact-modeling investigation 158
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 148
Reliability investigation of T-RAM cells for DRAM applications 142
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part II: on-field operation and distributed-cycling effects 131
Totale 2.998
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Categoria #
all - tutte 8.623
article - articoli 5.115
book - libri 0
conference - conferenze 3.508
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 17.246
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Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2021/2022102 0 10 9 4 4 4 6 15 11 6 8 25
2022/2023222 19 2 0 28 31 39 3 25 46 6 19 4
2023/202494 5 12 9 9 3 9 9 2 1 20 0 15
2024/2025334 0 3 4 19 48 50 1 36 69 8 50 46
2025/20261.188 238 187 43 48 47 68 224 41 46 141 25 80
2026/202739 17 22 0 0 0 0 0 0 0 0 0 0
Totale 2.998