PAOLUCCI, GIOVANNI MARIA
 Distribuzione geografica
Continente #
NA - Nord America 1.116
EU - Europa 245
AS - Asia 98
AF - Africa 1
OC - Oceania 1
Totale 1.461
Nazione #
US - Stati Uniti d'America 1.091
IT - Italia 79
AT - Austria 61
CN - Cina 40
CA - Canada 25
VN - Vietnam 24
SG - Singapore 23
DE - Germania 21
FI - Finlandia 20
GB - Regno Unito 15
IE - Irlanda 11
NL - Olanda 10
BE - Belgio 6
ES - Italia 6
SE - Svezia 6
CH - Svizzera 3
KR - Corea 3
UA - Ucraina 3
BN - Brunei Darussalam 1
CI - Costa d'Avorio 1
FR - Francia 1
HU - Ungheria 1
IN - India 1
JP - Giappone 1
MD - Moldavia 1
MY - Malesia 1
NZ - Nuova Zelanda 1
PK - Pakistan 1
RS - Serbia 1
SA - Arabia Saudita 1
TR - Turchia 1
TW - Taiwan 1
Totale 1.461
Città #
Fairfield 181
Woodbridge 119
Seattle 97
Chandler 87
Ann Arbor 82
Wilmington 78
Ashburn 71
Houston 66
Vienna 61
Cambridge 60
Boardman 21
Milan 21
Ottawa 21
Dearborn 18
Lawrence 17
Medford 17
Santa Clara 17
Dong Ket 16
Beijing 14
Singapore 14
Dublin 10
Capelle 7
Des Moines 7
Jacksonville 7
Brussels 6
San Diego 5
Dresden 4
Madrid 4
Dallas 3
Edinburgh 3
Helsinki 3
London 3
Washington 3
Atlanta 2
Frankfurt am Main 2
Hanover 2
Hebei 2
Málaga 2
Pavullo 2
Portland 2
Redwood City 2
Wuhan 2
Zurich 2
Abidjan 1
Amsterdam 1
Auckland 1
Bandar Seri Begawan 1
Belgrade 1
Budapest 1
Chisinau 1
Colorno 1
Denver 1
Duncan 1
Erding 1
Faisalabad 1
Fuzhou 1
Groningen 1
Guelph 1
Istanbul 1
Jinan 1
Kilburn 1
Kuala Lumpur 1
Kumar 1
Lake Forest 1
Leawood 1
Mountain View 1
Nanjing 1
Norwalk 1
Overland Park 1
Redmond 1
Riyadh 1
Roncadelle 1
San Mauro Torinese 1
Scandiano 1
Shanghai 1
Sunnyvale 1
Tianjin 1
Tokyo 1
Vancouver 1
Vittuone 1
Walldorf 1
Totale 1.201
Nome #
First detection of single-electron charging of the floating gate of NAND Flash memory cells 125
Investigation of the turn-on of T-RAM cells under transient conditions 117
Random telegraph noise-induced sensitivity of data retention to cell position in the programmed distribution of NAND Flash memory arrays 113
Fitting cells into a narrow VT interval: physical constraints along the lifetime of an extremely scaled NAND Flash memory array 111
Cycling pattern and read/bake conditions dependence of random telegraph noise in decananometer NAND Flash arrays 96
Working principles of a DRAM cell based on gated-thyristor bistability 93
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 92
A single-electron analysis of NAND Flash memory programming 91
Resolving discrete emission events: a new perspective for detrapping investigation in NAND Flash memories 88
Impact of the array background pattern on cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories 83
Reliability investigation of T-RAM cells for DRAM applications 77
Cycling-induced threshold-voltage instabilities in nanoscale NAND Flash memories: sensitivity to the array background pattern 77
A new spectral approach to modeling charge trapping/detrapping in NAND Flash memories 77
String current in decananometer NAND Flash arrays: a compact-modeling investigation 74
Investigation of cycling-induced VT instabilities in NAND Flash cells via compact modeling 71
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part I: VT instabilities 67
Revisiting charge trapping/detrapping in Flash memories from a discrete and statistical standpoint - Part II: on-field operation and distributed-cycling effects 48
Totale 1.500
Categoria #
all - tutte 4.961
article - articoli 2.952
book - libri 0
conference - conferenze 2.009
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.922


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020330 0 0 0 0 65 59 43 44 47 23 30 19
2020/2021173 44 8 5 18 6 15 2 12 10 13 14 26
2021/2022105 3 10 9 4 4 4 6 15 11 6 8 25
2022/2023222 19 2 0 28 31 39 3 25 46 6 19 4
2023/202494 5 12 9 9 3 9 9 2 1 20 0 15
2024/202563 0 3 4 19 37 0 0 0 0 0 0 0
Totale 1.500