CASTELLANI, NICCOLO'
 Distribuzione geografica
Continente #
NA - Nord America 611
EU - Europa 172
AS - Asia 35
Totale 818
Nazione #
US - Stati Uniti d'America 594
AT - Austria 42
IT - Italia 39
GB - Regno Unito 22
SE - Svezia 17
CA - Canada 16
FI - Finlandia 14
CN - Cina 12
VN - Vietnam 12
DE - Germania 9
IE - Irlanda 8
SG - Singapore 7
UA - Ucraina 7
BE - Belgio 5
ES - Italia 3
NL - Olanda 3
CR - Costa Rica 1
FR - Francia 1
HU - Ungheria 1
IL - Israele 1
IN - India 1
LU - Lussemburgo 1
MY - Malesia 1
PK - Pakistan 1
Totale 818
Città #
Fairfield 95
Ann Arbor 62
Chandler 52
Woodbridge 50
Ashburn 44
Seattle 44
Vienna 42
Houston 35
Wilmington 35
Cambridge 33
Dearborn 24
Ottawa 14
Dong Ket 10
Lawrence 10
Jacksonville 9
Beijing 8
Dublin 8
Medford 8
Des Moines 6
Brussels 5
Boardman 4
Helsinki 4
San Diego 4
Singapore 4
Edinburgh 3
London 3
Milan 3
Acton 2
Auburn Hills 2
Capelle 2
Kilburn 2
Málaga 2
Princeton 2
Vancouver 2
Wuhan 2
Bergamo 1
Budapest 1
Chiswick 1
Dallas 1
Dresden 1
Duncan 1
Erding 1
Faisalabad 1
Hefei 1
Kuala Lumpur 1
Kumar 1
Luxembourg 1
Madrid 1
Mountain View 1
New York 1
Paris 1
Redwood City 1
Roncadelle 1
San José 1
Tel Aviv 1
Tianjin 1
Tower Hamlets 1
Walldorf 1
Washington 1
Totale 659
Nome #
Investigation of the turn-on of T-RAM cells under transient conditions 113
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method 95
Modeling of dynamic operation of T-RAM cells 95
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories 91
Working principles of a DRAM cell based on gated-thyristor bistability 90
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices 89
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors 89
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 85
Three-dimensional electrostatics- and atomistic doping-induced variability of RTN time constants in nanoscale MOS devices - Part II: spectroscopic implications 47
Three-dimensional electrostatics- and atomistic doping-induced variability of RTN time constants in nanoscale MOS devices - Part I: physical investigation 43
Totale 837
Categoria #
all - tutte 2.755
article - articoli 2.189
book - libri 0
conference - conferenze 566
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.510


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/2020212 0 0 4 19 33 35 28 20 25 17 19 12
2020/202190 9 5 4 4 4 6 3 7 11 11 11 15
2021/202282 3 11 7 3 4 5 4 13 5 4 7 16
2022/2023130 11 5 0 12 22 20 0 15 26 4 13 2
2023/202453 5 10 0 7 2 4 4 4 0 11 0 6
2024/20251 0 1 0 0 0 0 0 0 0 0 0 0
Totale 837