CASTELLANI, NICCOLO'
 Distribuzione geografica
Continente #
AS - Asia 73
EU - Europa 66
NA - Nord America 47
SA - Sud America 1
Totale 187
Nazione #
US - Stati Uniti d'America 46
KR - Corea 43
IT - Italia 31
CN - Cina 16
NL - Olanda 9
FR - Francia 8
DE - Germania 6
TW - Taiwan 6
RO - Romania 5
CH - Svizzera 3
ID - Indonesia 2
RU - Federazione Russa 2
AR - Argentina 1
CA - Canada 1
GB - Regno Unito 1
HK - Hong Kong 1
IN - India 1
IR - Iran 1
JP - Giappone 1
SG - Singapore 1
TR - Turchia 1
UA - Ucraina 1
Totale 187
Città #
Milan 8
Ashburn 7
Taipei 6
Bucharest 4
Hefei 4
Waalre 4
Boardman 3
Council Bluffs 3
Hangzhou 3
Houston 3
Los Angeles 3
Parsippany 3
Pohang 3
Seo-gu 3
Utrecht 3
Beijing 2
Chicago 2
Piscataway 2
South Tangerang 2
Wuhan 2
Alameda 1
Ankara 1
Ann Arbor 1
Arconate 1
Bellevue 1
Brasov 1
Buenos Aires 1
Buffalo 1
Cedar Knolls 1
Dallas 1
Düsseldorf 1
Eyragues 1
Eysins 1
Fleming Island 1
Frankfurt am Main 1
Geneva 1
Genoa 1
Gyalshing 1
Herndon 1
Howell 1
Kanazawa 1
Lausanne 1
Miami 1
Orsay 1
Paris 1
Pasadena 1
Poltava 1
Québec 1
Seoul 1
Shenzhen 1
Totale 100
Nome #
Modeling of dynamic operation of T-RAM cells, file e0c31c0e-7783-4599-e053-1705fe0aef77 70
Working principles of a DRAM cell based on gated-thyristor bistability, file e0c31c0d-c6bc-4599-e053-1705fe0aef77 67
Investigation of the turn-on of T-RAM cells under transient conditions, file e0c31c0e-b370-4599-e053-1705fe0aef77 35
Working principles of a DRAM cell based on gated-thyristor bistability, file e0c31c08-1c28-4599-e053-1705fe0aef77 3
Investigation of the turn-on of T-RAM cells under transient conditions, file e0c31c08-248b-4599-e053-1705fe0aef77 3
Modeling of dynamic operation of T-RAM cells, file e0c31c08-3279-4599-e053-1705fe0aef77 3
Three-dimensional electrostatics- and atomistic doping-induced variability of RTN time constants in nanoscale MOS devices - Part I: physical investigation, file e0c31c08-048f-4599-e053-1705fe0aef77 2
Three-dimensional electrostatics- and atomistic doping-induced variability of RTN time constants in nanoscale MOS devices - Part II: spectroscopic implications, file e0c31c08-0490-4599-e053-1705fe0aef77 2
Dynamic analysis of current-voltage characteristics of nanoscale gated-thyristors, file e0c31c08-0d4c-4599-e053-1705fe0aef77 2
Impact of atomistic doping and 3D electrostatics on the variability of RTN time constants in Flash memories, file e0c31c07-f519-4599-e053-1705fe0aef77 1
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs, file e0c31c08-0a1b-4599-e053-1705fe0aef77 1
Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method, file e0c31c08-174c-4599-e053-1705fe0aef77 1
Assessment of the statistical impedance field method for the analysis of the RTN amplitude in nanoscale MOS devices, file e0c31c08-174d-4599-e053-1705fe0aef77 1
Totale 191
Categoria #
all - tutte 708
article - articoli 706
book - libri 0
conference - conferenze 2
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 1.416


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/20191 0 0 0 0 0 0 0 0 0 0 0 1
2019/202011 2 0 1 0 3 0 0 0 0 4 1 0
2020/202113 1 0 0 1 0 0 3 2 0 6 0 0
2021/202256 2 1 4 4 1 0 0 39 1 3 0 1
2022/202330 1 2 3 1 0 2 3 5 3 2 7 1
2023/202467 3 13 9 4 8 2 5 14 4 5 0 0
Totale 191