CECCHI, STEFANO CARLO
 Distribuzione geografica
Continente #
NA - Nord America 2.998
EU - Europa 870
AS - Asia 184
AF - Africa 5
OC - Oceania 1
Totale 4.058
Nazione #
US - Stati Uniti d'America 2.955
AT - Austria 244
IT - Italia 169
SE - Svezia 113
GB - Regno Unito 79
FI - Finlandia 68
VN - Vietnam 58
DE - Germania 53
SG - Singapore 44
CA - Canada 43
CN - Cina 37
IE - Irlanda 33
ES - Italia 28
UA - Ucraina 25
NL - Olanda 22
TR - Turchia 18
BE - Belgio 15
FR - Francia 15
JO - Giordania 15
JP - Giappone 6
CH - Svizzera 5
IN - India 3
MU - Mauritius 3
CI - Costa d'Avorio 2
KR - Corea 2
AU - Australia 1
GR - Grecia 1
IR - Iran 1
Totale 4.058
Città #
Fairfield 478
Woodbridge 394
Ann Arbor 322
Vienna 241
Wilmington 226
Houston 225
Ashburn 207
Chandler 206
Seattle 172
Cambridge 167
Dearborn 67
Milan 46
Lawrence 45
Ottawa 41
Medford 40
Auburn Hills 38
Dublin 33
Des Moines 31
Jacksonville 31
Málaga 28
Dong Ket 27
Beijing 24
Helsinki 23
San Diego 22
Singapore 21
Amsterdam 19
Izmir 18
Amman 15
Brussels 15
London 13
Boardman 8
Redwood City 8
Mountain View 6
New York 6
Princeton 6
Turin 6
Los Angeles 5
Phoenix 5
San Donato Milanese 5
Chicago 4
Norwalk 4
Washington 4
Bern 3
Concordia Sulla Secchia 3
Hefei 3
Nanchang 3
Nürnberg 3
Portland 3
Verona 3
Abidjan 2
Chiswick 2
Columbus 2
Delhi 2
Glasgow 2
Nanjing 2
Rome 2
Toronto 2
Zurich 2
Cary 1
Changsha 1
Chemnitz 1
Chengdu 1
Cologne 1
Costa Mesa 1
Dallas 1
Easton 1
Edinburgh 1
Erding 1
Frankfurt am Main 1
Genzano Di Roma 1
Grenoble 1
Hounslow 1
Hyderabad 1
Islington 1
Kilburn 1
Kish 1
Kunming 1
Lainate 1
Lappeenranta 1
Melbourne 1
Minatomirai 1
New Bedfont 1
Old Bridge 1
Perugia 1
Prescot 1
Redmond 1
Soragna 1
Southend 1
Sutton Coldfield 1
Tavagnacco 1
Wuhan 1
York 1
Zhengzhou 1
Totale 3.376
Nome #
Epitaxial Si1−xGex alloys studied by spin-polarized photoemission 157
1.55 μm direct bandgap electroluminescence from strained n-Ge quantum wells grown on Si substrates 136
Spin polarized photoemission from strained Ge epilayers grown by low-energy plasma-enhanced CVD (LEPECVD) 132
Dislocation engineering in SiGe on periodic and aperiodic Si(001) templates studied by fast scanning X-ray nanodiffraction 117
Spin polarized photoemission from strained Ge epilayers 116
Photoinduced inverse spin Hall effect in Pt/Ge(001) at room temperature 116
Ge/SiGe Superlattices for Thermoelectric Devices Grown by Low-Energy Plasma-Enhanced Chemical Vapor Deposition 109
Holes in germanium quantum wells: spin relaxation and temperature dynamics 108
Optical spin orientation in group-IV heterostructures 106
Ge/SiGe Superlattices for Nanostructured Thermoelectric Modules 105
Ge/SiGe superlattices for thermoelectric energy conversion devices 98
Si/SiGe Nanoscale Engineered Thermoelectric Materials for Energy Harvesting 98
Direct-Gap Gain and Optical Absorption in Germanium Correlated to the Density of Photoexcited Carriers, Doping, and Strain 97
Integrated germanium optical interconnects on silicon substrates 96
Thermal Conductivity Measurement Methods for SiGe Thermoelectric Materials 95
Multilayered Ge/SiGe Material in Microfabricated Thermoelectric Modules 95
Electro-refractive effect in Ge/SiGe multiple quantum wells 93
Ge/SiGe heterostructures as emitters of polarized electrons 92
Strain release management in SiGe/Si films by substrate patterning 91
Optical Spin Injection and Spin Lifetime in Ge Heterostructures 88
Optical spin injection in SiGe heterostructures 87
Spin-polarized photoemission from SiGe heterostructures 87
Thermal transport through short-period SiGe nanodot superlattices 87
Dephasing in Ge/SiGe quantum wells measured by means of coherent oscillations 86
Tailoring the spin polarization in Ge/SiGe multiple quantum wells 86
Controlling the polarization dynamics by strong THz fields in photoexcited germanium quantum wells 84
Power Factor Characterization of Ge/SiGe Thermoelectric Superlattices at 300 K 84
The thermoelectric properties of Ge/SiGe modulation doped superlattices 83
Refractive index change induced by quantum confined stark effect in Ge quantum wells 83
Optical tailoring of carrier spin polarization in Ge/SiGe multiple quantum wells 80
Strong confinement-induced engineering of the g factor and lifetime of conduction electron spins in Ge quantum wells 78
Investigation of charge-to-spin conversion in GeTe 78
Prospects for SiGe thermoelectric generators 77
High quality SiGe waveguide platform for Ge photonics on bulk silicon substrates 77
Phase-shift in waveguide integrated Ge quantum wells 76
Thermoelectric cross-plane properties on p- and n-Ge/SixGe1-x superlattices 75
Optical spin injection and spin lifetime in Ge heterostructures 74
The cross-plane thermoelectric properties of p-Ge/Si0.5Ge0.5 superlattices 69
Si/SiGe Thermoelectric Generators 69
Optical interconnects based on Ge/SiGe multiple quantum well structures 68
Thin SiGe virtual substrates for Ge heterostructures integration on silicon 67
Photoinduced inverse spin-Hall eect in Pt/GaAs and Pt/Ge 60
Structural investigations of the alpha(12) Si-Ge superstructure 53
Optical Spin Orientation in SiGe Heterostructures 49
Room-temperature ferroelectric switching of spin-to-charge conversion in germanium telluride 42
The thermoelectric properties of Ge/SiGe based superlattices: From materials to Energy Harvesting Modules 41
Photonic interconnection made by a Ge/SiGe MQW modulator connected to a Ge/SiGe MQW photodetector through a SiGe waveguide 33
Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m (Sb2 Te3 )n Lamellae 3
Totale 4.081
Categoria #
all - tutte 12.661
article - articoli 8.732
book - libri 0
conference - conferenze 3.929
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 25.322


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/2019155 0 0 0 0 0 0 0 0 0 0 0 155
2019/20201.071 74 63 24 85 124 141 128 96 106 103 96 31
2020/2021397 38 33 27 35 19 17 35 30 26 28 34 75
2021/2022442 8 67 35 103 10 11 30 21 27 8 41 81
2022/2023515 63 35 36 43 57 75 0 32 80 37 35 22
2023/2024251 11 49 15 15 10 30 24 5 1 38 10 43
Totale 4.081