AMOROSO, SALVATORE MARIA
 Distribuzione geografica
Continente #
NA - Nord America 1.017
EU - Europa 373
AS - Asia 47
Continente sconosciuto - Info sul continente non disponibili 1
Totale 1.438
Nazione #
US - Stati Uniti d'America 987
AT - Austria 77
UA - Ucraina 63
IT - Italia 61
VN - Vietnam 32
CA - Canada 30
DE - Germania 29
GB - Regno Unito 29
FI - Finlandia 28
SE - Svezia 23
ES - Italia 20
IE - Irlanda 18
BE - Belgio 13
CN - Cina 8
IN - India 5
BG - Bulgaria 4
FR - Francia 4
HU - Ungheria 2
EU - Europa 1
ID - Indonesia 1
JP - Giappone 1
MD - Moldavia 1
PT - Portogallo 1
Totale 1.438
Città #
Fairfield 144
Chandler 134
Woodbridge 91
Houston 84
Ann Arbor 79
Vienna 77
Seattle 60
Wilmington 59
Ashburn 48
Cambridge 39
Jacksonville 38
Ottawa 29
Dearborn 24
Málaga 20
Dong Ket 19
Lawrence 19
Medford 19
Dublin 18
Brussels 13
Des Moines 13
San Diego 10
Washington 9
Helsinki 7
Milan 7
New York 6
Auburn Hills 4
Beijing 4
Sofia 4
Stockholm 4
Edinburgh 3
Kumar 3
Norwalk 3
Budapest 2
Columbus 2
Frankfurt am Main 2
Grafing 2
Lappeenranta 2
Los Angeles 2
Miami 2
Paris 2
Shanghai 2
Verona 2
Acton 1
Atlanta 1
Boardman 1
Busto Arsizio 1
Calcinate 1
Chisinau 1
Easton 1
Falkenstein 1
Hanoi 1
Hefei 1
Jakarta 1
Lisbon 1
London 1
Mountain View 1
Nanchang 1
San Jose 1
Tokyo 1
Vancouver 1
Totale 1.129
Nome #
Semi-analytical model for the transient operation of gate-all-around charge-trap memories 109
Doping engineering for random telegraph noise suppression in deca-nanometer Flash memories 106
Impact of cell shape on random telegraph noise in decananometer Flash memories 99
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories 93
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories 93
Reliability constraints for TANOS memories due to alumina trapping and leakage 85
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state 85
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs 85
Impact of neutral threshold-voltage spread and electron-emission statistics on data retention of nanoscale NAND Flash 84
Comprehensive numerical simulation of threshold-voltage transients in nitride memories 77
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices 76
Three-dimensional simulation of charge-trap memory programming - Part II: Variability 75
Physical modeling for programming of TANOS memories in the Fowler-Nordheim regime 72
Impact of nonuniform doping on random telegraph noise in Flash memory device 70
Charge retention phenomena in charge transfer silicon nitride: impact of technology and operating conditions 62
Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modeling 59
Comprehensive investigation of statistical effects in nitride memories - Part II: Scaling analysis and impact on device performance 55
Al2O3 optimization for Charge Trap memory application 50
Three-dimensional simulation of charge-trap memory programming - Part I: Average behavior 46
Totale 1.481
Categoria #
all - tutte 4.513
article - articoli 3.322
book - libri 0
conference - conferenze 1.191
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 9.026


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2018/201996 0 0 0 0 0 0 0 0 0 0 47 49
2019/2020311 24 24 7 20 38 35 41 25 41 10 32 14
2020/2021198 26 8 20 7 16 3 16 21 15 16 10 40
2021/2022175 12 36 16 2 14 3 14 8 5 11 20 34
2022/2023266 19 9 18 23 35 55 0 25 29 22 31 0
2023/2024100 2 25 3 13 5 11 3 6 1 31 0 0
Totale 1.481