AMOROSO, SALVATORE MARIA
 Distribuzione geografica
Continente #
EU - Europa 11
Totale 11
Nazione #
IT - Italia 11
Totale 11
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Three-dimensional simulation of charge-trap memory programming - Part I: Average behavior, file e0c31c07-dfb4-4599-e053-1705fe0aef77 1
Three-dimensional simulation of charge-trap memory programming - Part II: Variability, file e0c31c07-dfb5-4599-e053-1705fe0aef77 1
Comprehensive investigation of statistical effects in nitride memories - Part II: Scaling analysis and impact on device performance, file e0c31c07-e140-4599-e053-1705fe0aef77 1
Comprehensive investigation of statistical effects in nitride memories - Part I: Physics-based modeling, file e0c31c07-e142-4599-e053-1705fe0aef77 1
Investigation of the ISPP dynamics and of the programming efficiency of charge-trap memories, file e0c31c07-e14b-4599-e053-1705fe0aef77 1
Reliability constraints for TANOS memories due to alumina trapping and leakage, file e0c31c07-e152-4599-e053-1705fe0aef77 1
Semi-analytical model for the transient operation of gate-all-around charge-trap memories, file e0c31c07-e2ad-4599-e053-1705fe0aef77 1
3D Monte Carlo simulation of the programming dynamics and their statistical variability in nanoscale charge-trap memories, file e0c31c07-e805-4599-e053-1705fe0aef77 1
Quantum-mechanical charge distribution in cylindrical gate-all-around MOS devices, file e0c31c07-f4f1-4599-e053-1705fe0aef77 1
Accuracy and issues of the spectroscopic analysis of RTN traps in nanoscale MOSFETs, file e0c31c08-0a1b-4599-e053-1705fe0aef77 1
Investigation of the RTN distribution of nanoscale MOS devices from subthreshold to on-state, file e0c31c08-0d4d-4599-e053-1705fe0aef77 1
Totale 11
Categoria #
all - tutte 11
article - articoli 8
book - libri 0
conference - conferenze 3
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 22


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Totale 11