RUSSO, UGO
 Distribuzione geografica
Continente #
NA - Nord America 542
EU - Europa 165
AS - Asia 74
SA - Sud America 20
AF - Africa 4
Continente sconosciuto - Info sul continente non disponibili 1
Totale 806
Nazione #
US - Stati Uniti d'America 530
SE - Svezia 33
UA - Ucraina 30
SG - Singapore 28
AT - Austria 21
BR - Brasile 18
CN - Cina 18
IT - Italia 17
DE - Germania 14
NL - Olanda 14
CA - Canada 11
FI - Finlandia 9
JO - Giordania 9
GB - Regno Unito 8
VN - Vietnam 8
FR - Francia 7
IE - Irlanda 7
KR - Corea 3
TW - Taiwan 3
ZA - Sudafrica 3
AE - Emirati Arabi Uniti 1
AR - Argentina 1
AZ - Azerbaigian 1
CL - Cile 1
CZ - Repubblica Ceca 1
ES - Italia 1
EU - Europa 1
GR - Grecia 1
HK - Hong Kong 1
IQ - Iraq 1
JM - Giamaica 1
LV - Lettonia 1
MA - Marocco 1
RU - Federazione Russa 1
TR - Turchia 1
Totale 806
Città #
Fairfield 78
Woodbridge 60
Santa Clara 54
Chandler 38
Wilmington 29
Ashburn 28
Seattle 26
Cambridge 23
Singapore 22
Houston 21
Vienna 21
Jacksonville 19
Ann Arbor 17
Dearborn 15
Boardman 11
Ottawa 11
Amman 9
Lawrence 9
Medford 9
Beijing 8
Council Bluffs 8
Dublin 7
Amsterdam 4
Dong Ket 4
London 4
San Diego 4
Johannesburg 3
Los Angeles 3
Des Moines 2
Hillsboro 2
Manaus 2
Milan 2
Nanzih District 2
Norwalk 2
Rio Claro 2
Rome 2
Seongnam 2
Shanghai 2
Zhengzhou 2
Almenara 1
Ankara 1
Aracaju 1
Atlanta 1
Baku 1
Baotou 1
Brooklyn 1
Charlotte 1
Concórdia 1
Dubai 1
Grand Rapids 1
Guangzhou 1
Guatapará 1
Henderson 1
Hong Kong 1
Ilhéus 1
Jiaxing 1
Midvale 1
Mountain View 1
Muriaé 1
Nazaré da Mata 1
New York 1
Osasco 1
Palhoça 1
Paris 1
Prague 1
Prescot 1
Quitandinha 1
Rabat 1
Richmond 1
Riga 1
San Jose 1
Santa Rosa 1
Santiago Metropolitan 1
Seoul 1
Sulaymaniyah 1
Sunnyvale 1
São João del Rei 1
São Paulo 1
São Pedro 1
The Dalles 1
Yaroslavl 1
Totale 609
Nome #
Filament conduction and reset mechanism in NiO-based resistive-switching memory (RRAM) devices 116
Study of multilevel programming in programmable metallization cell (PMC) memory 100
Modeling and simulation of conduction characteristics and programming operation in nanoscaled phase-change memory cells 100
Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices. 99
Analytical modeling of chalcogenide crystallization for PCM data-retention extrapolation 92
Voltage-driven ON-OFF transition and tradeoff with program and erase current in programmable metallization cell (PMC) memory 84
Intrinsic data retenction in nanoscaled phase-change memories - Part II: Statistical analysis and prediction of failure time 76
Intrinsic data retention in nanoscaled phase-change memories - Part I: Monte Carlo model for crystallization and percolation 74
Modeling of programming and read performance in phase-change memories - Part I: cell optimization and scaling 67
Totale 808
Categoria #
all - tutte 2.880
article - articoli 2.880
book - libri 0
conference - conferenze 0
curatela - curatele 0
other - altro 0
patent - brevetti 0
selected - selezionate 0
volume - volumi 0
Totale 5.760


Totale Lug Ago Sett Ott Nov Dic Gen Feb Mar Apr Mag Giu
2019/20207 0 0 0 0 0 0 0 0 0 0 0 7
2020/202199 11 6 9 1 9 12 6 6 7 12 6 14
2021/202276 3 12 11 4 10 2 2 6 2 4 5 15
2022/202397 9 5 5 4 18 11 0 9 26 0 10 0
2023/202429 2 8 1 2 5 2 4 0 0 0 0 5
2024/2025176 0 8 5 0 48 29 2 19 23 7 20 15
Totale 808