RE.PUBLIC@POLIMI pubblicazioni di ricerca del Politecnico di Milano

VENERONI, ALESSANDRO

VENERONI, ALESSANDRO  

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Titolo Data di pubblicazione Autori File
4H SiC epitaxial growth with chlorine addition 1-gen-2006 VENERONI, ALESSANDROMASI, MAURIZIO +
A combined three-dimensional kinetic Monte Carlo and quantum chemistry study of the CVD of Si on Si(100) surfaces 1-gen-2004 CAVALLOTTI, CARLO ALESSANDROBARBATO, ALESSANDROVENERONI, ALESSANDRO
A new MOVPE reactor for heteroepitaxial GaAs deposition on large-scale Ge substrates 1-gen-2006 MASI, MAURIZIOMOSCATELLI, DAVIDEVENERONI, ALESSANDRO +
Designing a large scale CVD reactor for GaAs growth on Ge substrates by multi-hierachy modeling 1-gen-2005 MOSCATELLI, DAVIDEVENERONI, ALESSANDROCAVALLOTTI, CARLO ALESSANDROMASI, MAURIZIO +
Epitaxial deposition of silicon carbide films in a horizontal hot-wall CVD reactor 1-gen-2005 MASI, MAURIZIOVENERONI, ALESSANDRO +
Epitaxial Deposition of Silicon Carbide Films in a Horizontal Hotwall CVD Reactor 1-gen-2005 VENERONI, ALESSANDROMASI, MAURIZIO +
Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route 1-gen-2007 MASI, MAURIZIOVENERONI, ALESSANDROFIORUCCI, ALESSANDROVALENTE, GIANLUCA +
Fluid-dynamics during vapor epitaxy and modeling 1-gen-2003 MASI, MAURIZIODI STANISLAO, MARCO SANTEVENERONI, ALESSANDRO
Gas-phase and surface kinetics of epitaxial silicon carbide growth involving chlorine-containing species 1-gen-2006 VENERONI, ALESSANDROMASI, MAURIZIO
High growth rate process in a SiC horizontal CVD reactor using HCl 1-gen-2006 VENERONI, ALESSANDROZAMOLO, LAURAMASI, MAURIZIO +
Horizontal hot wall reactor design for epi-SiC growth 1-gen-2005 VENERONI, ALESSANDROMASI, MAURIZIO +
Materials computation towards technological impact: the multiscale approach to thin films deposition 1-gen-2005 CAVALLOTTI, CARLO ALESSANDROMOSCATELLI, DAVIDEVENERONI, ALESSANDRO +
Modeling of epitaxial silicon carbide deposition 1-gen-2005 MASI, MAURIZIOMOSCATELLI, DAVIDEVENERONI, ALESSANDRO +
Modeling of large-scale horizontal reactor for silicon epitaxy 1-gen-2005 MASI, MAURIZIOMOSCATELLI, DAVIDEVENERONI, ALESSANDRO
Multiscale simulation of silicon film growth 1-gen-2005 CAVALLOTTI, CARLO ALESSANDROVENERONI, ALESSANDROMASI, MAURIZIO +
New Achievements on CVD Based Methods for SiC Epitaxial Growth 1-gen-2005 VALENTE, GIANLUCAVENERONI, ALESSANDROZAMOLO, LAURAMASI, MAURIZIO +
Silicon carbide growth mechanism from SiH4, SiHCl3 and nC3H8 1-gen-2005 VENERONI, ALESSANDROMASI, MAURIZIO +