Sfoglia per Autore
Effective mass in remotely doped Ge quantum wells
2003-01-01 B., Roessner; Isella, Giovanni; H., VON KAENEL
Ge quantification in SiGe relaxed buffer layers by RBS and SIMS
2004-01-01 F., SANCHEZ ALMAZAN; E., Napolitani; A., Carnera; A. V., Drigo; M., Berti; J., Stangl; Z., Zhong; G., Bauer; Isella, Giovanni; H., VON KAENEL
Low-energy plasma-enhanced chemical vapor deposition for strained Si and Ge heterostructures and devices
2004-01-01 Isella, Giovanni; Chrastina, Daniel; B., Rossner; T., Hackbarth; H. J., Herzog; U., Konig; VON KÄNEL, Hans
Relaxed SiGe heteroepitaxy on Si with very thin buffer layers: experimental LEPECVD indications and an interpretation based on strain-dependent dislocation nature
2004-01-01 A., Marzegalli; F., Montalenti; M., Bollani; Leo, Miglio; Isella, Giovanni; Chrastina, Daniel; H., VON KAENEL
Matrix effects in SIMS depth profiles of SiGe relaxed buffer layers
2004-01-01 F., SANCHEZ ALMAZAN; E., Napolitani; A., Carnera; A. V., Drigo; Isella, Giovanni; H., VON KAENEL; M., Berti
Formation of strain-induced Si-rich and Ge-rich nanowires at misfit dislocations in SiGe: A model supported by photoluminescence data
2004-01-01 L., Martinelli; A., Marzegalli; P., Raiteri; Bollani, Monica; F., Montalenti; L., Miglio; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans
High mobility SiGe heterostructures fabricated by low-energy plasma-enhanced chemical vapor deposition
2004-01-01 VON KÄNEL, Hans; Chrastina, Daniel; B., Roessner; Isella, Giovanni; J. P., Hague; Bollani, Monica
Scattering mechanisms in high-mobility strained-Ge channels
2004-01-01 B., Roessner; Chrastina, Daniel; Isella, Giovanni; H., VON KAENEL
Strained Si HFETs for microwave applications: state-of-the-art and further approaches
2004-01-01 M., ENCISO AGUILAR; M., Rodriguez; N., Zerouinian; F., Aniel; T., Hackbarth; H. J., Herzog; U., Koenig; S., Mantl; B., Hollaender; Chrastina, Daniel; Isella, Giovanni; VON KÄNEL, Hans; K., Lyyutovich; M., Oehme
High quality SiGe electronic material grown by low energy plasma enhanced chemical vapour deposition
2004-01-01 Chrastina, Daniel; Isella, Giovanni; B., Roessner; Bollani, Monica; E., Mueller; T., Hackbarth; H., VON KAENEL
LEPECVD - a production technique for SiGe MOSFETs and MODFETs
2005-01-01 Chrastina, Daniel; T., Hackbarth; C., Hague; H., Herzog; K., Hieber; Isella, Giovanni; U., Koenig; B., Roessner; H., Von Kaenel
X-Ray Investigation of Thick Epitaxial GaAs/InGaAs Layers on Ge Pseudosubstrates
2005-01-01 A., REHMAN KHAN; K., Mundboth; J., Stangl; G., Bauer; H., VON KAENEL; A., Federov; Isella, Giovanni; D., Colombo
Long wavelength room temperature laser operation of a strained InGaAs/GaAs quantum well structure monolithically grown by metalorganic chemical vapor deposition on a low energy-plasma enhanced chemical vapour deposition graded misoriented Ge/Si virtual substrate
2005-01-01 Y., Chriqui; G., SAINT GIRONS; Isella, Giovanni; VON KÄNEL, Hans; S., Bouchoule; I., Sagnes
Thin relaxed SiGe virtual substrates grown by low-energy plasma-enhanced chemical vapor deposition
2005-01-01 Chrastina, Daniel; Isella, Giovanni; Bollani, Monica; B., Rössner; E., Müller; T., Hackbarth; E., Wintersberger; Z., Zhong; J., Stangl; H., von Känel
Fe thin films grown on single-crystal and virtual Ge(001) substrates
2005-01-01 Cantoni, Matteo; M., Riva; Isella, Giovanni; Bertacco, Riccardo; Ciccacci, Franco
Raman spectroscopy of Si1−xGex epilayers
2005-01-01 F., Pezzoli; L., Martinelli; E., Grilli; M., Guzzi; S., Sanguinetti; Bollani, Monica; Chrastina, Daniel; Isella, Giovanni; H., von Känel; E., Wintersberger; J., Stangl; G., Bauer
Raman spectroscopy of Si1-xGex epilayers
2005-01-01 G., Bauer; J., Stangl; H., Von Kaenel; E., Wintersberger; Bollani, Monica; Chrastina, Daniel; E., Grilli; M., Guzzi; Isella, Giovanni; L., Martinelli; F., Pezzoli; S., Sanguinetti
SJ and TJ GaAs concentrator solra cells on Si virtual wafers
2005-01-01 R., Campesato; C., Casale; C., Flores; G., Gabetta; Isella, Giovanni; G., Smekens; G., Timo'; J., Vanbegin; H., Von Kaenel
Electron-electron interaction in p-SiGe/Ge quantum wells
2005-01-01 B., Batlogg; Chrastina, Daniel; Isella, Giovanni; B., Roessner; H., Von Kaenel
InGaAs/GaAs sources monolithically grown by MOVPE on Ge/Si substrates
2005-01-01 D., Bensahel; S., Bouchoule; Y., Chriqui; Isella, Giovanni; O., Kermarrec; I., Sagnes; G., Saint Girons; H., Von Kaenel
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