Nanoscale structures in silicon have been produced by means of a maskless plasma process that employs tetrafluoromethane and hydrogen. The influence of the radio-frequency power and process time on the surface texturing was studied. Desirable texturing effect has been achieved by applying an RF power in the range of 200–280 W and process time in the range of 20–30 min. The textured surface is characterized by nanopillars with lateral dimensions ranging from 50 to 300 nm and with a depth in the 100–300 nm range. Depending on process parameters in the plasma etching recipe, the optical reflectance of the silicon surface is lowered and R < 5% is reached in the range going from the visible to the near-IR region.

Black-silicon production process by CF4/H2 plasma

PIETRALUNGA, SILVIA MARIA;DI FONZO, FABIO;INZOLI, FEDERICA;NAVA, GIORGIO;TAGLIAFERRI, ALBERTO;ZANI, MAURIZIO;ANGELLA, GIULIANO
2016

Abstract

Nanoscale structures in silicon have been produced by means of a maskless plasma process that employs tetrafluoromethane and hydrogen. The influence of the radio-frequency power and process time on the surface texturing was studied. Desirable texturing effect has been achieved by applying an RF power in the range of 200–280 W and process time in the range of 20–30 min. The textured surface is characterized by nanopillars with lateral dimensions ranging from 50 to 300 nm and with a depth in the 100–300 nm range. Depending on process parameters in the plasma etching recipe, the optical reflectance of the silicon surface is lowered and R < 5% is reached in the range going from the visible to the near-IR region.
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/977753
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