In this paper, we present an experimental procedure to extract the relative capacitive coupling of drain and gate with the floating-gate in a non-volatile memory cell. The method is used to quantitatively assess the increased drain turn-on immunity of discrete-trap memories in comparison with standard Flash. Results show that a large reduction in the relative drain to floating-gate capacitive coupling is obtained by discrete-trap storage, thanks to the low lateral coupling of the storage nodes.

Extraction of the floating-gate capacitive couplings for drain turn-on estimation in discrete-trap memories

MONZIO COMPAGNONI, CHRISTIAN;IELMINI, DANIELE;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO
2006-01-01

Abstract

In this paper, we present an experimental procedure to extract the relative capacitive coupling of drain and gate with the floating-gate in a non-volatile memory cell. The method is used to quantitatively assess the increased drain turn-on immunity of discrete-trap memories in comparison with standard Flash. Results show that a large reduction in the relative drain to floating-gate capacitive coupling is obtained by discrete-trap storage, thanks to the low lateral coupling of the storage nodes.
2006
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/552803
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