We performed 3D Monte Carlo simulations of SOI NAND nanocrystal memories investigating the scaling constraints due to both program failure and reliability concerns. We show that the NC density should be optimized as a trade-off between number fluctuation and SILC immunity and that proper optimization is needed in order to meet the 45 nm ITRS node requirements.

Program and SILC constraints on NC memories scaling: a Monte Carlo approach

GUSMEROLI, RICCARDO;SOTTOCORNOLA SPINELLI, ALESSANDRO;MONZIO COMPAGNONI, CHRISTIAN;IELMINI, DANIELE;LACAITA, ANDREA LEONARDO
2005-01-01

Abstract

We performed 3D Monte Carlo simulations of SOI NAND nanocrystal memories investigating the scaling constraints due to both program failure and reliability concerns. We show that the NC density should be optimized as a trade-off between number fluctuation and SILC immunity and that proper optimization is needed in order to meet the 45 nm ITRS node requirements.
2005
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2005, TECHNICAL DIGEST
0-7803-9268-X
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/264266
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