For the first time, memory devices with optimized high density (2E12#/cm(2)) LPCVD Si nanocrystals have been reproducibly achieved and studied on extensive statistical basis (from single cell up to 1Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND Flash at least to the 35nm and 65nm nodes, respectively.

How far will Silicon nanocrystals push the scaling limits of NVMs technologies?

MONZIO COMPAGNONI, CHRISTIAN;IELMINI, DANIELE;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO;
2003

Abstract

For the first time, memory devices with optimized high density (2E12#/cm(2)) LPCVD Si nanocrystals have been reproducibly achieved and studied on extensive statistical basis (from single cell up to 1Mb test-array) under different programming conditions. An original experimental and theoretical analysis of the threshold voltage shift distribution shows that Si nanocrystals have serious potential to push the scaling of NOR and NAND Flash at least to the 35nm and 65nm nodes, respectively.
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST
0-7803-7872-5
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/262581
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