We investigate transient currents in HfO2 dielectrics, considering their dependence on electric field, temperature and gate stack composition. We show that transient currents remain an issue even at very low temperatures and irrespective of the HfO2/SiO2 bilayer properties. Finally, we assess their impact on the reliability of precision circuit and memory applications Transient currents in HfO2 and their impact on circuit and memory applications (PDF Download Available). Available from: http://www.researchgate.net/publication/224672970_Transient_currents_in_HfO2_and_their_impact_on_circuit_and_memory_applications [accessed Oct 22, 2015].
Transient currents in HfO2 and their impact on circuit and memory applications
MONZIO COMPAGNONI, CHRISTIAN;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO;
2006-01-01
Abstract
We investigate transient currents in HfO2 dielectrics, considering their dependence on electric field, temperature and gate stack composition. We show that transient currents remain an issue even at very low temperatures and irrespective of the HfO2/SiO2 bilayer properties. Finally, we assess their impact on the reliability of precision circuit and memory applications Transient currents in HfO2 and their impact on circuit and memory applications (PDF Download Available). Available from: http://www.researchgate.net/publication/224672970_Transient_currents_in_HfO2_and_their_impact_on_circuit_and_memory_applications [accessed Oct 22, 2015].| File | Dimensione | Formato | |
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