Program/erase dynamics and channel conduction in nanocrystal memories

We present new models for nanocrystal (NC) memories, addressing program/erase (P/E) transients and carrier conduction in the channel controlled by discrete nodes. The model allows for the calculation of the achievable threshold-voltage (VT) window and WE times under uniform tunneling-injection conditions. Comparisons with experimental data are shown, demonstrating that our physically-based model correctly captures the VT dependence on critical cell and bias parameters. The model can be used to draw technological guidelines for window optimization in NC cells