Millimeter-wave backhauling links are of primary importance in the architecture of 5G telecommunication systems. Their implementation demands highly integrated front-end chips capable of fully exploiting the most advanced semiconductor technologies' capabilities. This work reports the design and experimental validation of several fundamental building blocks of D- and E-band backhauling front-ends implemented using 55-nm SiGe BiCMOS semiconductor technology. Results include an E-band I-Q receiver, a frequency synthesizer, two D-band amplifiers and, a D-band power amplifier.

SiGe BiCMOS Building Blocks for E- and D-Band Backhauling Front-Ends

Karman S.;Levantino S.;Mazzanti A.;Samori C.;Tesolin F.;
2021

Abstract

Millimeter-wave backhauling links are of primary importance in the architecture of 5G telecommunication systems. Their implementation demands highly integrated front-end chips capable of fully exploiting the most advanced semiconductor technologies' capabilities. This work reports the design and experimental validation of several fundamental building blocks of D- and E-band backhauling front-ends implemented using 55-nm SiGe BiCMOS semiconductor technology. Results include an E-band I-Q receiver, a frequency synthesizer, two D-band amplifiers and, a D-band power amplifier.
EuMIC 2021 - 2021 16th European Microwave Integrated Circuits Conference
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/1218502
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