Millimeter-wave backhauling links are of primary importance in the architecture of 5G telecommunication systems. Their implementation demands highly integrated front-end chips capable of fully exploiting the most advanced semiconductor technologies' capabilities. This work reports the design and experimental validation of several fundamental building blocks of D- and E-band backhauling front-ends implemented using 55-nm SiGe BiCMOS semiconductor technology. Results include an E-band I-Q receiver, a frequency synthesizer, two D-band amplifiers and, a D-band power amplifier.
SiGe BiCMOS Building Blocks for E- and D-Band Backhauling Front-Ends
Karman S.;Levantino S.;Mazzanti A.;Samori C.;Tesolin F.;
2021-01-01
Abstract
Millimeter-wave backhauling links are of primary importance in the architecture of 5G telecommunication systems. Their implementation demands highly integrated front-end chips capable of fully exploiting the most advanced semiconductor technologies' capabilities. This work reports the design and experimental validation of several fundamental building blocks of D- and E-band backhauling front-ends implemented using 55-nm SiGe BiCMOS semiconductor technology. Results include an E-band I-Q receiver, a frequency synthesizer, two D-band amplifiers and, a D-band power amplifier.File in questo prodotto:
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SiGe_BiCMOS_Building_Blocks_for_E-_and_D-Band_Backhauling_Front-Ends.pdf
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