We review the impact of random telegraph noise (RTN) on the operation of NOR and NAND Flash memories. We begin with a comprehensive set of experimental data for the RTN distribution within Flash arrays, including cycling and temperature dependences, moving then to the physical interpretation of the phenomenon and model description. RTN effect on the programmed threshold voltage is then addressed. Finally, we review the impact of RTN in 3D NAND Flash and its relation to their polycrystalline channel, from an experimental and theoretical standpoint.
Random Telegraph Noise in Flash Memories
A. Sottocornola Spinelli;C. Monzio Compagnoni;A. L. Lacaita
2020-01-01
Abstract
We review the impact of random telegraph noise (RTN) on the operation of NOR and NAND Flash memories. We begin with a comprehensive set of experimental data for the RTN distribution within Flash arrays, including cycling and temperature dependences, moving then to the physical interpretation of the phenomenon and model description. RTN effect on the programmed threshold voltage is then addressed. Finally, we review the impact of RTN in 3D NAND Flash and its relation to their polycrystalline channel, from an experimental and theoretical standpoint.File in questo prodotto:
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