SHARMA, DEEPAK
SHARMA, DEEPAK
DIPARTIMENTO DI ELETTRONICA E INFORMAZIONE (attivo dal 01/01/1900 al 31/12/2012)
Physical mechanism and temperature acceleration of relaxation effects in phase-change memory cells
2008-01-01 Ielmini, Daniele; Sharma, Deepak; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part I: Experimental study
2009-01-01 Ielmini, Daniele; Sharma, Deepak; Lavizzari, Simone; Lacaita, ANDREA LEONARDO
Reliability impact of chalcogenide-structure relaxation in phase change memory (PCM) cells – Part II: Physics-based modeling
2009-01-01 Lavizzari, Simone; Ielmini, Daniele; Sharma, Deepak; Lacaita, ANDREA LEONARDO
Structural relaxation in chalcogenide-based phase change memories (PCMs): from defect-annihilation kinetic to device-reliability prediction
2008-01-01 Lavizzari, Simone; Ielmini, Daniele; Sharma, Deepak; Lacaita, ANDREA LEONARDO
Temperature acceleration of structural relaxation in amorphous Ge2Sb2Te2
2008-01-01 Ielmini, Daniele; Lavizzari, Simone; Sharma, Deepak; Lacaita, ANDREA LEONARDO
Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices
2010-01-01 Lavizzari, Simone; Sharma, Deepak; Ielmini, Daniele
Transient effects of delay, switching and recovery in phase change memory (PCM) devices
2008-01-01 Lavizzari, Simone; Ielmini, Daniele; Sharma, Deepak; Lacaita, ANDREA LEONARDO