WANG, ZHONGQIANG
WANG, ZHONGQIANG
DIPARTIMENTO DI ELETTRONICA, INFORMAZIONE E BIOINGEGNERIA
A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems
2015-01-01 Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele
Analytical Modeling of Current Overshoot in Oxide-Based Resistive Switching Memory (RRAM)
2016-01-01 Ambrogio, Stefano; Milo, Valerio; Wang, Zhongqiang; Balatti, Simone; Ielmini, Daniele
Analytical Modeling of Organic-Inorganic CH3 NH3 PbI3 Perovskite Resistive Switching and its Application for Neuromorphic Recognition
2018-01-01 Ren, Yanyun; Milo, Valerio; Wang, Zhongqiang; Xu, Haiyang; Ielmini, Daniele; Zhao, Xiaoning; Liu, Yichun
Optoelectronic memristor based on a-C:Te film for muti-mode reservoir computing
2025-01-01 Tian, Qiaoling; Xun, Kuo; Li, Zhuangzhuang; Zhao, Xiaoning; Lin, Ya; Tao, Ye; Wang, Zhongqiang; Ielmini, Daniele; Xu, Haiyang; Liu, Yichun
Pavlovian conditioning achieved via one-transistor/one-resistor memristive synapse
2022-01-01 Cheng, Yankun; Lin, Ya; Zeng, Tao; Shan, Xuanyu; Wang, Zhongqiang; Zhao, Xiaoning; Ielmini, Daniele; Xu, Haiyang; Liu, Yichun
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices
2016-01-01 Balatti, Simone; Ambrogio, Stefano; Carboni, Roberto; Milo, Valerio; Wang, Zhongqiang; Calderoni, A.; Ramaswamy, N.; Ielmini, Daniele
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory
2016-01-01 Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Sills, Scott; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele
Voltage-controlled cycling endurance of HfOx-based resistive-switching memory
2015-01-01 Balatti, Simone; Ambrogio, Stefano; Wang, Zhongqiang; Sills, Scott; Calderoni, Alessandro; Ramaswamy, Nirmal; Ielmini, Daniele