Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.

Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers

RADAELLI, GRETA;BERTACCO, RICCARDO;
2015-01-01

Abstract

Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.
2015
depletion width; electroresistance; ferroelectric tunnel junction; Schottky barrier; Materials Science (all); Mechanics of Materials; Mechanical Engineering
File in questo prodotto:
File Dimensione Formato  
11311-972003_Bertacco.pdf

accesso aperto

: Post-Print (DRAFT o Author’s Accepted Manuscript-AAM)
Dimensione 916.93 kB
Formato Adobe PDF
916.93 kB Adobe PDF Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/972003
Citazioni
  • ???jsp.display-item.citation.pmc??? 4
  • Scopus 48
  • ???jsp.display-item.citation.isi??? 47
social impact