Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.

Large room-temperature electroresistance in dual-modulated ferroelectric tunnel barriers

RADAELLI, GRETA;BERTACCO, RICCARDO;
2015-01-01

Abstract

Pt/BaTiO3/La0.7Sr0.3MnO3 tunnel junctions, at negative voltage bias, for two polarization directions are represented. It is demonstrated that reversing the polarization direction of a ferroelectric barrier in a tunnel junction leads to a change of junction conductance and capacitance, with concomitant variations on the barrier height and effective thickness, both contributing to produce larger electroresistance.
2015
depletion width; electroresistance; ferroelectric tunnel junction; Schottky barrier; Materials Science (all); Mechanics of Materials; Mechanical Engineering
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/972003
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