We present a novel integrated circuit for subnanosecond gating of InGaAs/InP single-photon avalanche diodes (SPADs). It enables the detector in well-defined time intervals (down to 500 ps) and strongly reduces the afterpulsing effect. It includes a fast pulser with rising/falling edge shorter than 300 ps (20%-80%), a wideband comparator and hold-off logic circuitry. The fast avalanche quenching reduces the charge flow in the SPAD, thus decreasing the afterpulsing, a detrimental effect that limits the maximum count rate of InGaAs/InP SPADs. The wideband SiGe comparator guarantees very low timing jitter of the acquired waveforms: <100 ps (FWHM) at 5 V excess bias voltage, when operated with InGaAs/InP SPAD, whereas we estimate that the time jitter of the circuit is < 30 ps.

Integrated Circuit for Subnanosecond Gating of InGaAs/InP SPAD

RUGGERI, ALESSANDRO;CICCARELLA, PIETRO;VILLA, FEDERICA ALBERTA;ZAPPA, FRANCO;TOSI, ALBERTO
2015

Abstract

We present a novel integrated circuit for subnanosecond gating of InGaAs/InP single-photon avalanche diodes (SPADs). It enables the detector in well-defined time intervals (down to 500 ps) and strongly reduces the afterpulsing effect. It includes a fast pulser with rising/falling edge shorter than 300 ps (20%-80%), a wideband comparator and hold-off logic circuitry. The fast avalanche quenching reduces the charge flow in the SPAD, thus decreasing the afterpulsing, a detrimental effect that limits the maximum count rate of InGaAs/InP SPADs. The wideband SiGe comparator guarantees very low timing jitter of the acquired waveforms: <100 ps (FWHM) at 5 V excess bias voltage, when operated with InGaAs/InP SPAD, whereas we estimate that the time jitter of the circuit is < 30 ps.
active quenching circuit; afterpulsing; InGaAs/InP SPAD; single-photon avalanche diode (SPAD); single-photon counting; single-photon detector; Electrical and Electronic Engineering; Atomic and Molecular Physics, and Optics; Condensed Matter Physics; sezele;
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Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/971958
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