We present the current–voltage characteristics of a T‐shaped semiconductor electron waveguide structure in the nonlinear regime. This system is interesting as a potential quantum interference transistor. Calculated zero‐temperature I–V characteristics are with multiple peaks and exhibit regions of negative‐differential resistance. The peak‐to‐valley ratio has maximum value of 3:1. The calculated values of the transconductance and the differential drain conductance are small, which suggests limited abilities for conventional applications of the transistor.
The nonlinear transport regime of a T‐shaped quantum interference transistor
SORDAN, ROMAN;
1996-01-01
Abstract
We present the current–voltage characteristics of a T‐shaped semiconductor electron waveguide structure in the nonlinear regime. This system is interesting as a potential quantum interference transistor. Calculated zero‐temperature I–V characteristics are with multiple peaks and exhibit regions of negative‐differential resistance. The peak‐to‐valley ratio has maximum value of 3:1. The calculated values of the transconductance and the differential drain conductance are small, which suggests limited abilities for conventional applications of the transistor.File in questo prodotto:
Non ci sono file associati a questo prodotto.
I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.