A general method for the fabrication of nanowires with a thickness of ∼6 nm and width of 15–20 nm is presented. The approach is applicable to inorganic and organic materials and is demonstrated here for metallic systems. The wires are produced by ion-beam etching of a gold–palladium thin films covered by chemically modified vanadium–pentoxide nanowires as an etching mask. The two-probe room-temperature resistance of the wires is found to range between 7.8 and 18.1 kΩ. Nanogaps with a length on the order of 1 nm were created within the nanowires by breaking via electromigration.
Removable template route to metallic nanowires and nanogaps
SORDAN, ROMAN;
2001-01-01
Abstract
A general method for the fabrication of nanowires with a thickness of ∼6 nm and width of 15–20 nm is presented. The approach is applicable to inorganic and organic materials and is demonstrated here for metallic systems. The wires are produced by ion-beam etching of a gold–palladium thin films covered by chemically modified vanadium–pentoxide nanowires as an etching mask. The two-probe room-temperature resistance of the wires is found to range between 7.8 and 18.1 kΩ. Nanogaps with a length on the order of 1 nm were created within the nanowires by breaking via electromigration.File in questo prodotto:
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