Carbon nanotubes (CNTs) are now well-established as efficient channels for field-effect transistors (FETs). Logic circuitry based on CNTs have until now been demonstrated by replacing the silicon channel of a conventional metal-oxide-semiconducutor FET by a CNT. We propose a circuit design utilizing the ambipolarity of the Schottky-barrier-type CNT-FET to realize an exclusive-OR (XOR) gate using a single CNT. The merits and limitations of such a CNT-XOR gate with respect to conventional XOR gates are discussed.

Exclusive-OR gate with a single carbon nanotube

SORDAN, ROMAN;
2006-01-01

Abstract

Carbon nanotubes (CNTs) are now well-established as efficient channels for field-effect transistors (FETs). Logic circuitry based on CNTs have until now been demonstrated by replacing the silicon channel of a conventional metal-oxide-semiconducutor FET by a CNT. We propose a circuit design utilizing the ambipolarity of the Schottky-barrier-type CNT-FET to realize an exclusive-OR (XOR) gate using a single CNT. The merits and limitations of such a CNT-XOR gate with respect to conventional XOR gates are discussed.
2006
carbon nanotubes, logic gates
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/643533
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