We introduce a novel SPAD device with high photon detection efficiency and good performances in terms of temporal resolution and dark count rate. The designed detectors are able to attain a PDE as high as 40% at a wavelength of 800 nm while keeping photon detection jitter below 100 ps. The device was fabricated with a suitable planar silicon technology process that allows the development of detector arrays.
Silicon SPAD with near-infrared enhanced spectral response
PANZERI, FRANCESCO;GULINATTI, ANGELO;RECH, IVAN;GHIONI, MASSIMO ANTONIO;COVA, SERGIO
2011-01-01
Abstract
We introduce a novel SPAD device with high photon detection efficiency and good performances in terms of temporal resolution and dark count rate. The designed detectors are able to attain a PDE as high as 40% at a wavelength of 800 nm while keeping photon detection jitter below 100 ps. The device was fabricated with a suitable planar silicon technology process that allows the development of detector arrays.File in questo prodotto:
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2011_EOO_Panzeri_SiliconSpadWithNirEnhancedSpectralResponse.pdf
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