We introduce a novel SPAD device with high photon detection efficiency and good performances in terms of temporal resolution and dark count rate. The designed detectors are able to attain a PDE as high as 40% at a wavelength of 800 nm while keeping photon detection jitter below 100 ps. The device was fabricated with a suitable planar silicon technology process that allows the development of detector arrays.

Silicon SPAD with near-infrared enhanced spectral response

PANZERI, FRANCESCO;GULINATTI, ANGELO;RECH, IVAN;GHIONI, MASSIMO ANTONIO;COVA, SERGIO
2011-01-01

Abstract

We introduce a novel SPAD device with high photon detection efficiency and good performances in terms of temporal resolution and dark count rate. The designed detectors are able to attain a PDE as high as 40% at a wavelength of 800 nm while keeping photon detection jitter below 100 ps. The device was fabricated with a suitable planar silicon technology process that allows the development of detector arrays.
Photon Counting Applications, Quantum Optics, and Quantum Information Transfer and Processing III
9780819486622
sezele; Single-Photon Avalanche Diode (SPAD); Photon Detection Efficiency (PDE); Time Correlated Single Photon Counting (TCSPC); Enhanced Photon Detection Efficiency
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/607290
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