A graphene nanoribbon memory cell is fabricated by patterning graphene into nanoribbons using V2O5 nanofibers as etching masks. A pronounced memory effect is observed under ambient conditions. Reliable switching between two conductivity states is demonstrated for clock frequencies of up to 1 kHz and pulse durations as short as 500 ns for > 10^7 cycles.
A graphene nanoribbon memory cell
TRAVERSI, FLORIANO;SORDAN, ROMAN
2010-01-01
Abstract
A graphene nanoribbon memory cell is fabricated by patterning graphene into nanoribbons using V2O5 nanofibers as etching masks. A pronounced memory effect is observed under ambient conditions. Reliable switching between two conductivity states is demonstrated for clock frequencies of up to 1 kHz and pulse durations as short as 500 ns for > 10^7 cycles.File in questo prodotto:
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