Among the planarization methods, electrochemical chemical mechanical polishing (e-CMP) is recognized as the most eligible for future applications in the electronic industry. The introduction of porous low-k dielectric materials into semiconductor devices requires the development of low downforce Cu e-CMP. It is wellknown that inhibitors play a key-role in the e-CMP process. In this study, the effect of 5-phenyl-1H-tetrazole (PTA)) on e-CMP of copper was investigated.

Effect of 5-phenyl-1H-tetrazole on Copper Dissolution for e-CMP

COJOCARU, PAULA;MAGAGNIN, LUCA;CAVALLOTTI, PIETRO LUIGI
2010-01-01

Abstract

Among the planarization methods, electrochemical chemical mechanical polishing (e-CMP) is recognized as the most eligible for future applications in the electronic industry. The introduction of porous low-k dielectric materials into semiconductor devices requires the development of low downforce Cu e-CMP. It is wellknown that inhibitors play a key-role in the e-CMP process. In this study, the effect of 5-phenyl-1H-tetrazole (PTA)) on e-CMP of copper was investigated.
2010
File in questo prodotto:
File Dimensione Formato  
ECS Transactions_25_65-69_2010.pdf

Accesso riservato

: Altro materiale allegato
Dimensione 248.15 kB
Formato Adobe PDF
248.15 kB Adobe PDF   Visualizza/Apri

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/580643
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 1
  • ???jsp.display-item.citation.isi??? ND
social impact