We will report on our advances on the development of a new planar silicon SPAD with high photon detection efficiency (PDE) and good photon timing resolution. We will show that a 10μm thick epitaxial layer allows for the absorption of a significant fraction of the incident photons even at the longer wavelengths, while a suitable electric field profile limits the breakdown voltage value and the timing jitter. Simulations show that the new devices can attain a PDE higher than 30% at a wavelength of 800nm.
Planar silicon SPADs with improved photon detection efficiency
GULINATTI, ANGELO;PANZERI, FRANCESCO;RECH, IVAN;GHIONI, MASSIMO ANTONIO;COVA, SERGIO
2010-01-01
Abstract
We will report on our advances on the development of a new planar silicon SPAD with high photon detection efficiency (PDE) and good photon timing resolution. We will show that a 10μm thick epitaxial layer allows for the absorption of a significant fraction of the incident photons even at the longer wavelengths, while a suitable electric field profile limits the breakdown voltage value and the timing jitter. Simulations show that the new devices can attain a PDE higher than 30% at a wavelength of 800nm.File in questo prodotto:
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2010_DSS_Gulinatti_PlanarSiSpadWithImprovedPde_7681_22.pdf
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