We investigate the effects on the electronic structure induced by a relaxation of the graphite lattice along the direction of the phonons associated to the G and to the D peak characteristic of the Raman spectra of graphitic materials. To this aim the bond length dependence of the hopping integral b is introduced in a Huckel (tight-binding) hamiltonian, giving rise to two different b1 and b2 parameters. A Peierls-like gap opening is found for a relaxation along the D peak phonon and not for the G peak phonon. The electronic density of states is discussed and a link is shown between the electronic structure of benzene and the electronic structure of graphene at the K point in reciprocal space.

Relaxing the graphite lattice along critical directions: The effect of the electron-phonon coupling on the pi electron band structure

TOMMASINI, MATTEO MARIA SAVERIO;DI DONATO, EUGENIO;CASTIGLIONI, CHIARA;ZERBI, GIUSEPPE
2005-01-01

Abstract

We investigate the effects on the electronic structure induced by a relaxation of the graphite lattice along the direction of the phonons associated to the G and to the D peak characteristic of the Raman spectra of graphitic materials. To this aim the bond length dependence of the hopping integral b is introduced in a Huckel (tight-binding) hamiltonian, giving rise to two different b1 and b2 parameters. A Peierls-like gap opening is found for a relaxation along the D peak phonon and not for the G peak phonon. The electronic density of states is discussed and a link is shown between the electronic structure of benzene and the electronic structure of graphene at the K point in reciprocal space.
2005
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/554698
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