The aim of this work is to present the application of photoconductive properties of electro-optical n-doped CdTe:In single crystals to all-optical processing of signals at λ=1550 nm. The mechanism exploits the photogeneration of charge carriers from deep intragap energy levels and their trap-limited drift process under the action of an externally applied cw electric field. An internal space-charge counterfield results that locally shields the electro-optic effect.

CdTe:In monocrystal modules for all-optical processing

PIETRALUNGA, SILVIA MARIA;BOFFI, PIERPAOLO;MARTINELLI, MARIO
1996

Abstract

The aim of this work is to present the application of photoconductive properties of electro-optical n-doped CdTe:In single crystals to all-optical processing of signals at λ=1550 nm. The mechanism exploits the photogeneration of charge carriers from deep intragap energy levels and their trap-limited drift process under the action of an externally applied cw electric field. An internal space-charge counterfield results that locally shields the electro-optic effect.
Optical communications; TLC
File in questo prodotto:
Non ci sono file associati a questo prodotto.

I documenti in IRIS sono protetti da copyright e tutti i diritti sono riservati, salvo diversa indicazione.

Utilizza questo identificativo per citare o creare un link a questo documento: http://hdl.handle.net/11311/522060
Citazioni
  • ???jsp.display-item.citation.pmc??? ND
  • Scopus 10
  • ???jsp.display-item.citation.isi??? 11
social impact