The aim of this work is to present the application of photoconductive properties of electro-optical n-doped CdTe:In single crystals to all-optical processing of signals at λ=1550 nm. The mechanism exploits the photogeneration of charge carriers from deep intragap energy levels and their trap-limited drift process under the action of an externally applied cw electric field. An internal space-charge counterfield results that locally shields the electro-optic effect.
CdTe:In monocrystal modules for all-optical processing
PIETRALUNGA, SILVIA MARIA;BOFFI, PIERPAOLO;MARTINELLI, MARIO
1996-01-01
Abstract
The aim of this work is to present the application of photoconductive properties of electro-optical n-doped CdTe:In single crystals to all-optical processing of signals at λ=1550 nm. The mechanism exploits the photogeneration of charge carriers from deep intragap energy levels and their trap-limited drift process under the action of an externally applied cw electric field. An internal space-charge counterfield results that locally shields the electro-optic effect.File in questo prodotto:
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