We demonstrate the possibility of using high resistivity CdZnTe as an active material for all-optical switching of signals in the third telecommunication window, with sub-nanosecond response times. A wide range of IR control wavelengths are effective. The physical mechanism relies on joint exploitation of Pockels and optically generated field shielding effect. Fast recovery confirms the presence of an efficient recombination center.
Sub-Nanosecond all-Optical Switching in CdZnTe
PIETRALUNGA, SILVIA MARIA;MARTINELLI, MARIO
2000-01-01
Abstract
We demonstrate the possibility of using high resistivity CdZnTe as an active material for all-optical switching of signals in the third telecommunication window, with sub-nanosecond response times. A wide range of IR control wavelengths are effective. The physical mechanism relies on joint exploitation of Pockels and optically generated field shielding effect. Fast recovery confirms the presence of an efficient recombination center.File in questo prodotto:
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