We study the energy location of traps responsible for anomalous stress-induced leakage current (SILC) in Flash cells. A new experimental technique based on the analysis of the SILC under injection of drain-accelerated electrons is presented. We provide evidence for the existence of high-energy traps assisting the leakage process, sensing also the electron energy at the SILC spot and verifying that this energy correlates with the position along the channel. Finally, the behavior of SILC-affected cells under soft-programming condition is discussed with reference to the energy location of oxide traps.

High-energy oxide traps and anomalous soft-programming in Flash memories

IELMINI, DANIELE;SOTTOCORNOLA SPINELLI, ALESSANDRO;LACAITA, ANDREA LEONARDO;
2004-01-01

Abstract

We study the energy location of traps responsible for anomalous stress-induced leakage current (SILC) in Flash cells. A new experimental technique based on the analysis of the SILC under injection of drain-accelerated electrons is presented. We provide evidence for the existence of high-energy traps assisting the leakage process, sensing also the electron energy at the SILC spot and verifying that this energy correlates with the position along the channel. Finally, the behavior of SILC-affected cells under soft-programming condition is discussed with reference to the energy location of oxide traps.
Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International
0-7803-8684-1
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Utilizza questo identificativo per citare o creare un link a questo documento: https://hdl.handle.net/11311/240575
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